Methods for selectively wet etching substrates

Details Methods for selectively wet etching substrates Methods for selectively wet etching substrates

1994-07-22

1995-11-21

Dang, Thi

Etching a substrate: processes

Nongaseous phase etching of substrate

Relative movement between the substrate and a confined pool...

216 79, 1566371, B05D 500

Patent

active

054683386

ABSTRACT:
The invention is an improvement of a method for selectively etching a first surface of each of a plurality of wafers (21-23) comprising the steps of masking the entirety of each wafer except certain exposed portions to be etched on the first surface, and immersing the wafers in a heated etch bath (34) for a sufficient time to etch V-grooves (11) into the first surfaces. In one embodiment, the wafers are arranged in the etch bath with the first surface of each wafer (the surface to be etched) facing the first surface of another wafer. The first surfaces of all of the wafers are substantially parallel and are all substantially transverse to a bottom surface of the vessel containing the etch bath. The bottom surface of the vessel is heated to make in the etch bath a temperature gradient that is at a maximum at the bottom surface of the vessel and a minimum at the top surface of the bath. This temperature gradient thermally induces, between each pair of wafer first surfaces, etch bath currents that are directed vertically upwardly. These upwardly directed currents have been found to eliminate, or at least greatly reduce, the incidence of bumps in the V-grooves. The invention works because fresh etchant is continuously flowed past the exposed portions of the wafer to be selectively etched.

REFERENCES:
patent: 3964957 (1976-06-01), Walsh
patent: 4595454 (1986-06-01), Dautremont-Smith et al.
patent: 4818058 (1989-04-01), Bonanni
Crystal Patent Research Inc., Search Report, Mar. 4, 1994, 1 page.

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