Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-07-18
2006-07-18
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S690000, C438S691000, C438S705000, C438S725000, C438S624000, C438S639000, C438S638000, C438S421000, C438S422000
Reexamination Certificate
active
07078352
ABSTRACT:
A method for the production of airgaps in a semiconductor device and device produced therefrom. The formation of airgaps is accomplished, in part, by chemically and/or mechanically changing the properties of a first dielectric layer locally, such that at least part of said first dielectric layer is converted locally and becomes etchable by a first etching substance. The local conversion of the dielectric material may be achieved during anisotropic etching of the material in oxygen containing plasma or ex-situ by performing an oxidizing step (e.g., a UV/ozone treatment or supercritical carbon dioxide with addition of an oxidizer). Formation of airgaps is achieved after creation of conductive lines and, alternatively, a barrier layer by a first etching substance. The airgaps are formed in a dual damascene structure, near the vias and/or the trenches of the damascene structure.
REFERENCES:
patent: 6255156 (2001-07-01), Forbes et al.
patent: 6268261 (2001-07-01), Petrarca et al.
patent: 6342722 (2002-01-01), Armacost et al.
patent: 6387818 (2002-05-01), Lopatin
patent: 6492245 (2002-12-01), Liu et al.
patent: 6589861 (2003-07-01), Park et al.
patent: 6599814 (2003-07-01), Vanhaelemeersch et al.
patent: 2002/0055243 (2002-05-01), Lee
patent: 2002/0127844 (2002-09-01), Grill et al.
European Search Report for EP 04 44 7219.9, application of Interunivresitair Micro-Elektronica Centrum, dated Feb. 9, 2005. Includes Abstract.
European Search Report for EP 04 44 7220.7, application of Interuniversitair Micro-Elektronica Centrum, dated Feb. 9, 2005. Includes Abstract.
Beyer Gerald
de Mussy Jean Paul Gueneau
Maex Karen
Sutcliffe Victor
Fourson George
Hulbert & Berghoff LLP
Interuniversitair Microelektronica Centrum (IMEC vzw)
Maldonado Julio J.
McDonnell Boehnen
LandOfFree
Methods for selective integration of airgaps and devices... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods for selective integration of airgaps and devices..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for selective integration of airgaps and devices... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3545782