Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2008-01-15
2008-01-15
Fourson, George R. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S638000, C257SE23013, C257SE21581, C438S639000
Reexamination Certificate
active
07319274
ABSTRACT:
Methods for the production of airgaps in semiconductor devices and devices produced using such methods are disclosed. An example semiconductor device includes a damascene stack formed using such methods. The damascene stack includes a patterned dielectric layer including an interconnect structure, where the dielectric layer is formed of a dielectric material including Si, C and O. The damascene stack also includes a converted portion of the dielectric layer, where the converted portion is adjacent to the at least one interconnect structure and has a lower carbon content than the dielectric material. The damascene stack also includes an airgap formed adjacent to the interconnect structure, the airgap being formed by removing at least part of the converted portion using an etch compound.
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Beyer Gerald
de Mussy Jean Paul Gueneau
Maex Karen
Sutcliffe Victor
Fourson George R.
Interuniversitair Microelektronica Centrum (IMEC v2w)
Maldonado Julio J.
McDonnell Boehnen & Hulbert & Berghoff LLP
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