Methods for roughening and volume expansion of trench sidewalls

Details Methods for roughening and volume expansion of trench sidewalls Methods for roughening and volume expansion of trench sidewalls

1997-02-25

1999-03-02

Brown, Peter Toby

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

438391, 438243, 438248, 438665, 438964, H01L 2120

Patent

active

058770615

ABSTRACT:
Trench cells with increased storage capacity are prepared with roughened sidewalls using a layer of grainy polysilicon or hemispherical grain polysilicon. The top collar region of the trench is protected with oxide while the lower portion of the trench coated with polysilicon or hemispherical grain polysilicon is etched isotropically. The trench structure created has roughened sidewalls for increased volume of storage.

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