Stock material or miscellaneous articles – Composite – Of silicon containing
Reexamination Certificate
2005-09-20
2005-09-20
Stein, Stephen (Department: 1775)
Stock material or miscellaneous articles
Composite
Of silicon containing
C428S704000
Reexamination Certificate
active
06946200
ABSTRACT:
Layers of boron-doped silicon having reduced out-of-plane curvature are disclosed. The layers have substantially equal concentrations of boron near the top and bottom surfaces. Since the opposing concentrations are substantially equal, the compressive stresses on the layers are substantially balanced, thereby resulting in layers with reduced out-of-plane curvature.
REFERENCES:
patent: 4543457 (1985-09-01), Petersen et al.
patent: 4604636 (1986-08-01), Dalal
patent: 5731626 (1998-03-01), Eaglesham et al.
patent: 6017773 (2000-01-01), Fauchet et al.
patent: 6177323 (2001-01-01), Wu
patent: 2259311 (1993-03-01), None
patent: 405299348 (1993-11-01), None
patent: WO 85/03383 (1985-08-01), None
C. Cabuz et al. “Microphysical Investigations on Mechanical Structures Realized in P+ Silicon”,Journal of Microelectromechanical Systems, vol. 4, No. 3, Sep. 1995, pp. 109-118.
J. T. Borenstein et al., “Characterization of Membrane Curvature in Micromachined Silicon Accelerometers and Gyroscopes Using Optical Interferometry”,SPIE, vol. 2879, pp. 116-125.
“TMAH/IPA Anisotropic Etching Characteristics”,Sensors and Actuators A, 37-38, 1993, pp. 737-743.
M. Shikida et al., “Comparison of Anisotropic Etching Properties Between KOH and TMAH Solutions”, Dept. of Micro System Engineering, Nagoya University, Chikusa, Nagoya, 464-8603, Japan, dated prior to Aug. 8, 2000, 6 pages.
C. Cabuz, “Tradeoffs in MEMS Materials”,SPIE, vol. 2881, 1996, pp. 160-170.
Yogesh B. Gianchandani et al., “A Bulk Silicon Dissolved Wafer Process for Microelectromechanical Devices”,Journal of Microelectromechanical Systems, vol. 1, No. 2, Jun. 1992, pp. 77-85.
Cabuz Cleopatra
Erdmann Francis M.
Glenn Max C.
Horning Robert D.
Fredrick Kris T.
Honeywell International , Inc.
Stein Stephen
LandOfFree
Methods for reducing the curvature in boron-doped silicon... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods for reducing the curvature in boron-doped silicon..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for reducing the curvature in boron-doped silicon... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3388331