Methods for reducing encroachment of the field oxide into the ac

Details Methods for reducing encroachment of the field oxide into the ac Methods for reducing encroachment of the field oxide into the ac

1990-09-13

1992-06-02

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 73, H01L 2176

Patent

active

051186411

ABSTRACT:
Methods for reducing encroachment of the field oxide into the active area on a silicon integrated circuit are disclosed. The present invention modifies the conventional LOCOS technique for forming active areas and field oxide areas on a silicon substrate. Rather than fully forming the field oxide regions immediately after the silicon nitride layer is patterned and etched on the substrate, a thin field oxide is grown. This oxide is partially wet etched to leave a ribbon of bare silicon around and extending under the edges of the silicon nitride mask. An additional nitride layer is deposited over the entire wafer and anisotropically etched to form a nitride spacer between the original nitride mask and the partially grown field oxide. The nitride spacer seals the edge of the active area by inhibiting the diffusion of oxygen under the nitride mask. During subsequent field oxidation, the nitride spacer greatly reduces the encroachment of the field oxide into the active area.

REFERENCES:
patent: 4839301 (1989-06-01), Lee
patent: 4871688 (1989-10-01), Lowrey
Wu, T. C., et al., "The Influence of LOCOS Processing Parameters on the Shape of the Bird's Beak Structure", Journal of Electrochem. Soc.: Solid State Science and Technology, Jul. 1983, pp. 1563-1566.
Ghandi, S. K., "VCSI Fabrication Principles" Silicon and Gallium Arsenide .COPYRGT.1983, p. 524.
Noel, J. P. et al., "Characteristics of dc Magnetron Reactively Sputtered TiN.sub.x Films for Diffusion Barriers in III-V Semiconductor Metallization,"(1983).
Wittmer, M. et al., "Applications of TiN Thin Films in Silicon Device Technology".
Wittmer, M., "Properties and Microelectronic Applications of Thim Films of Refractory Metal Nitrides", J. Vac. Sci. Tech. A, vol. 3, No. 4 (1985).

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