Methods for providing a sub .15 micron magnetic memory...

Details Methods for providing a sub .15 micron magnetic memory... Methods for providing a sub .15 micron magnetic memory...

2005-08-23

2005-08-23

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S257000

Reexamination Certificate

active

06933155

ABSTRACT:
A method for providing a magnetic element is disclosed. The method includes providing at least one magnetic element layer and providing a hard mask structure for masking a portion of the at least one magnetic element layer. The hard mask structure is made from hard mask material(s) that are etchable for defining the hard mask structure. The hard mask structure also acts as a mask during definition of a width of the magnetic element. The method also includes defining the width of the magnetic element by removing a portion of the at least one magnetic element layer using the hard mask structure as a mask. The hard mask structure preferably acts as a polishing stop for a planarization step, such as a chemical mechanical polish, polishing resistant structures might be provided to improve planarization of a magnetic memory incorporating the magnetic element.

REFERENCES:
patent: 2002/0105827 (2002-08-01), Redon et al.
patent: 2003/0007398 (2003-01-01), Daughton et al.
patent: 2003/0059588 (2003-03-01), Hannah et al.
patent: 2004/0014245 (2004-01-01), Motoyoshi
J.F. Albert, et al, “Polarized Current Switching of a CO Thin Film Nanomagnet”, American Institute of Physics, vol. 77, No. 23, Dec. 4, 2000, pp. 3809-3811.
J.A. Katine, et al, “Current-Driven Magnetization Reversal and Spin-Wave Excitations in Co/Cu/Co Pillars”, the American Physical Society, vol. 84, No. 14, Apr. 3, 2000, pp. 3149-3151.
E.G. Myers, et al, “Point-Contact Studies of Current-Controlled Domain Switching in Magnetic Multilayers” Journal of Applied Physics, vol. 87, No. 9, May 1, 2000, pp. 5502-5503.
J.C. Slonczewski, “Theory and Application of Exchange-Driven Switching”, IEEE, Apr. 2000, pp. CE-02.
J.C. Slonczewski, “Current-Driven Excitation of Magnetic Multilayers”, Journal of Magnetism and Magnetic Materials, 1996, pp. 1.1-1.7.
J.C. Slonczewski, “Conductance and Exchange Coupling of Two Ferromagnets Separated by a Tunneling Barrier”, The American Physical Society, vol. 39, No. 10, Apr. 1, 1999, pp. 6995-7002.
J.Z. Sun, “Current-Driven Magnetic Switching in Manganite Trilayer Junctions”, Journal of Magnetism and Magnetic Materials, No. 202, 1999, pp. 157-162.
Daughton, et al., Patent Publication US2003/0007398 dated Jan. 9, 2003 Figures 3, 4, 5A; Paragraphs 60, 61, 67,68.

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