Methods for programming and reading NAND flash memory device...

Details Methods for programming and reading NAND flash memory device... Methods for programming and reading NAND flash memory device...

2008-04-15

2008-04-15

Tran, Michael T (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185240

Reexamination Certificate

active

11481022

ABSTRACT:
Methods for programming and reading a multi-level-cell NAND flash memory device having plural memory cells are disclosed to reduce the programming time and the reading time. The program method comprises the steps of: (a) programming the zero state memory cells, the first state memory cells, the second state memory cells and the third state memory cells to a zero state, (b) programming the second state memory cells from the zero state to a second state by switching the MSBs of the second state memory cells, and (c) programming the first state memory cells from the zero state to a first state by switching the LSBs of the first state memory cells and simultaneously programming the third state memory cells from the second state to a third state by switching the LSBs of the third state memory cells. The read method comprises the steps of: (d) reading the MSBs of the zero state memory cells, the first state memory cells, the second state memory cells, and the third state memory cells by a first verify signal and a second verify signal, and (e) reading the LSBs of the zero state memory cells, the first state memory cells, the second state memory cells, and the third state memory cells by the first verify signal and a third verify signal. A page buffer is also disclosed to perform the methods for programming and reading a multi-level-cell NAND flash memory device.

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