Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-04-01
2008-04-01
Phung, Anh (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180, C365S185280
Reexamination Certificate
active
07352631
ABSTRACT:
A technique to speed up the programming of a non-volatile memory device that has a floating body actively removes holes from the floating body that have accumulated after performing hot carrier injection (HCI). The steps of HCI and active hole removal can be alternated until the programming is complete. The active hole removal is faster than passively allowing holes to be removed, which can take milliseconds. The active hole removal can be achieved by reducing the drain voltage to a negative voltage and reducing the gate voltage as well. This results in directly withdrawing the holes from the floating body to the drain. Alternatively, reducing the drain voltage while maintaining current flow stops impact ionization while sub channel current collects the holes. Further alternatively, applying a negative gate voltage causes electrons generated by band to band tunneling and impact ionization near the drain to recombine with holes.
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Burnett James D.
Muralidhar Ramachandran
Clingan, Jr. James L.
Freescale Semiconductor Inc.
King Robert L.
Phung Anh
Singh Ranjeev
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