Methods for producing solid-state imaging device and...

Details Methods for producing solid-state imaging device and... Methods for producing solid-state imaging device and...

2011-07-12

2011-07-12

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

Reexamination Certificate

active

07977140

ABSTRACT:
A method for producing a solid-state imaging device includes steps of: forming transfer electrodes on a substrate having a plurality of light-sensing portions through a gate insulating layer so that the light-sensing portions are exposed; forming a planarized insulating layer on the substrate to cover the transfer electrodes formed on the substrate; forming openings in the planarized insulating layer so that each of the transfer electrodes is partly exposed out of the planarized insulating layer at a predetermined position; forming a wiring material layer so that the openings are filled with the wiring material layer; forming a resist layer on the wiring material layer; exposing and developing the resist layer so that only the resist layer in a predetermined area covering the openings is left; and patterning the wiring material layer using the exposed and developed resist layer to form connection wirings connected to the transfer electrodes by the openings.

REFERENCES:
patent: 5360744 (1994-11-01), Shimizu et al.
patent: 2006/0151818 (2006-07-01), Toumiya
patent: 2009/0149023 (2009-06-01), Koyanagi
patent: 09-148554 (1997-06-01), None
patent: 2002-076320 (2002-03-01), None
patent: 2006-041369 (2006-02-01), None
Japanese Office Action issued Apr. 20, 2010 for corresponding Japanese Application No. 2008-110670.

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