Methods for producing silicon nitride films and silicon...

Details Methods for producing silicon nitride films and silicon... Methods for producing silicon nitride films and silicon...

2007-03-20

2007-03-20

Chen, Bret (Department: 1762)

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

C427S579000

Reexamination Certificate

active

10669623

ABSTRACT:
Silicon nitride film is formed on substrate by feeding trisilylamine and ammonia into a CVD reaction chamber that contains a substrate. The ammonia gas/trisilylamine gas flow rate ratio is set to a value of at least about 10 and/or the thermal CVD reaction is run at a temperature no greater than about 600° C. Silicon oxynitride is obtained by introducing an oxygen source gas into the CVD reaction chamber. This method avoids the production of ammonium chloride and/or the incorporation of carbonaceous contaminants which are detrimental to the quality of the deposited film.

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