Methods for producing compound semiconductor devices

Details Methods for producing compound semiconductor devices Methods for producing compound semiconductor devices

1995-03-22

1996-11-05

Kunemund, Robert

Fishing, trapping, and vermin destroying

437133, H01L 21265

Patent

active

055717489

ABSTRACT:
In a method for producing a compound semiconductor device such as laser diodes, FET and HEMT, compound semiconductor is grown at a substrate temperature not greater than 500.degree. C. to form a semiconductor layer on a substrate of the semiconductor device. Then, an appropriate treatment, such as heat-treatment in reducing atmosphere, current flow treatment and hydrogen plasma treatment, is conducted to reduce crystal defects in the semiconductor layer attributable to the crystal growth at the low substrate temperature not greater than 500.degree. C.

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