Methods for producing compound semiconductor devices

Details Methods for producing compound semiconductor devices Methods for producing compound semiconductor devices

1994-02-08

1996-12-17

Kunemund, Robert

Fishing, trapping, and vermin destroying

117 88, 117 89, H01L 2120

Patent

active

055853064

ABSTRACT:
In a method for producing a compound semiconductor device such as laser devices, FET and HEMT, a crystal layer is formed with materials belonging to at least two (first and second) different groups of the periodic law table under a crystal growth condition under which a value equal to the number of arrival molecules of the material of the first group having a higher vapor pressure divided by the number of arrival molecules of the material of the second group having a lower vapor pressure is equal to or less than 2.5. More preferably, this value is equal to or less than 2.0. More concretely, the crystal layer is made of V/III group elements, for example, As of group V and at least Ga of group III. Under such condition, the crystal layer can be grown with a high quality at relatively low substrate temperatures lower than 500.degree. C.

REFERENCES:
patent: 4878218 (1989-10-01), Pessa et al.
Y. Horikoshi, et al "Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy" Japanese J. Appl. Phy. vol. 25, No. 10, Oct. 1986 pp. L868-L870.
H. Kunzel, et al "Quantitative Evaluation of Substrate Temperature Dependence of Ge Incorporation in GaAs During Molecular Beam Epitaxy" Applied Physics 22, 23-30 (1980).
S. Miyazawa, et al "Low-temperature molecular beam epitaxy growth of single quantum well GaAs/AlGaAs lasers" Japanese J. Appl. Phys. 2, Lett. vol. 30, No. 5B pp. L921-L923, 15 May 1991 (abstract only).

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