Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2006-07-18
2006-07-18
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S658000, C438S660000
Reexamination Certificate
active
07078309
ABSTRACT:
The invention provides methods which can be used to structure even precious metal electrodes with conventional CMP steps, in particular with the aid of conventional slurries such as are already used to structure non-precious metals. Owing to the formation of an alloy, the chemically active components of the slurry are capable of attacking the additive to the precious metal in the alloy, as a result of which the surface of the alloy layer is roughened and the mechanical removal of the precious metal is increased.
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Beitel Gerhard
Hartner Walter
Sänger Annette
Greenberg Laurence A.
Greenberg Werner H.
Infineon - Technologies AG
Locher Ralph E.
Picardat Kevin M.
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