Methods for producing a structured metal layer

Semiconductor device manufacturing: process – Making passive device – Stacked capacitor

Reexamination Certificate

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C438S658000, C438S660000

Reexamination Certificate

active

07078309

ABSTRACT:
The invention provides methods which can be used to structure even precious metal electrodes with conventional CMP steps, in particular with the aid of conventional slurries such as are already used to structure non-precious metals. Owing to the formation of an alloy, the chemically active components of the slurry are capable of attacking the additive to the precious metal in the alloy, as a result of which the surface of the alloy layer is roughened and the mechanical removal of the precious metal is increased.

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