Methods for preparing ruthenium and osmium compounds and films

Coating processes – Coating by vapor – gas – or smoke

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C427S252000, C427S255310

Reexamination Certificate

active

06872420

ABSTRACT:
The present invention provides methods for the preparation of compounds of the formula (Formula I):in-line-formulae description="In-line Formulae" end="lead"?LyM(CO)zin-line-formulae description="In-line Formulae" end="tail"?wherein M is Ru or Os, each L is independently a neutral ligand, y=1-4, and z=1-5. These methods involve the reaction of Ru3(CO)12or Os3(CO)12with a neutral ligand in a solvent system having a boiling point higher than that of benzene at atmospheric pressure.

REFERENCES:
patent: 5130172 (1992-07-01), Hicks et al.
patent: 5314727 (1994-05-01), McCormick et al.
patent: 5352488 (1994-10-01), Spencer et al.
patent: 5372849 (1994-12-01), McCormick et al.
patent: 5392189 (1995-02-01), Fazan et al.
patent: 5510651 (1996-04-01), Maniar et al.
patent: 5520992 (1996-05-01), Douglas et al.
patent: 5555486 (1996-09-01), Kingon et al.
patent: 5561307 (1996-10-01), Mihara et al.
patent: 5566045 (1996-10-01), Summerfelt et al.
patent: 5581436 (1996-12-01), Summerfelt et al.
patent: 5962716 (1999-10-01), Uhlenbrock et al.
patent: 6063705 (2000-05-01), Vaartstra
patent: 6074945 (2000-06-01), Vaartstra et al.
patent: 6114557 (2000-09-01), Uhlenbrock et al.
patent: 6133159 (2000-10-01), Vaartstra et al.
patent: 6281125 (2001-08-01), Vaartstra et al.
patent: 6517616 (2003-02-01), Marsh et al.
patent: 6541067 (2003-04-01), Marsh et al.
patent: 6576778 (2003-06-01), Uhlenbrock et al.
Anderson et al., “Carborane Complexes of Ruthenium: A Convenient Synthesis of [Ru(CO)3(η5-7,8-C2B9H11)] and a Study of Reactions of This Complex,”Organometallics, 14, 3516-3526 (1995).
Bai et al., “Low-temperature growth and orientational control in RuO2thin films by metal-organic chemical vapor deposition,” Thin Solid Films, 310:75-80.
Bennett et al., “Mono-olefin Chelate Complexes of Iron (0) and Ruthenium(0) with an Olefinic Tertiary Phosphine,”J. Chem. Soc. D., 7, 341-342 (1971).
Burt et al., “Hydrocarbon Complexes of Ruthenium. Part III. Reactions of Cycloheptatrienes with Ruthenium Carbonyl”, J.C.S. Dalton Trans., 8, 731-736 (1975).
Chatzitheodorou et al., “Low Temperature Chemical Preparation of Semiconducting Transition Metal Chalcogenide Films for Energy Conversion and Storage, Lubrication and Surface Protection”, Mater. Res. Bull., Abstract No. 109:233267b, 1 pg. (Dec. 1988).
Cowles et al., “Relative Reactivity of Co-ordinated Ligands in the Dienyltricarbonyl-ruthenium Cation, [(dienyl)Ru(CO)3]+,”Chem. Commun., 392 (Feb. 1969).
Deganello et al., “The Reaction of cis-Bicyclo[6.2.0]DECA-2,4,6-TRIENE with Dodecacarbonyltriruthenium”, J. of Organomet. Chem., 90, C31-C33 (1975).
Edwards et al., “The Photochemical Generation of Novel Neutral Mononuclear Ruthenium complexes and their Reactivity”, J. Organomet. Chem., 503, 15-20 (1995).
Ferrari et al., “Reactions of Dodecacarbonyltriosmium with Dienic Ligands”, J. Organomet. Chem., 182, 245-249 (1979).
Green et al., “Chemical Vapor Deposition of Ruthenium and Ruthenium Dioxide Films,”J. Electrochem. Soc., 132, 2677-2685 (1985).
Igumenov, “MO CVD of Noble Metals,” Journal de Physique IV , 5(6):C5-489 to C5-496 (1995).
Johnson et al., “Chemistry,”Nature, 901-902 (Mar., 1967).
Liao et al., “Characterization of RuO2thin films deposited on Si by metal-organic chemical vapor deposition,”Thin Solid Films, 287, 74-79 (1996).
Macchioni et al., “Cationic Bis- and Tris(η2-(pyrazol-1-yl)methane) Acetyl Complexes of Iron (II) and Ruthenium (II): Synthesis, Characterization, Reactivity, and Interionic Solution Structure by NOESY NMR Spectroscopy,”Organometallics, 16, 2139-2145 (1997).
Schumann et al., “Tricarbonylbis(Tri-t-Butylphosphin) Eisen(0) Unde-Ruthenium(0)”, J. Organomet. Chem., 166, 233-239 (1979).
Senzaki et al.,Proc. Electrochem. Soc., 97(25), 933-943 (Chemical Abstract 128:264103).
Shin, “Characterization of RuO2Thin Films Prepared by Hot-Wall Metallorganic Chemical Vapor Deposition,”J. Electrochem. Soc., 144, 1055 (1997).
Siegl et al., “Ruthenium(0) and Ruthenium(II) Complexes with 1,1,1-Tris(diphenylphosphinomethyl)ethane”, Inorganic Chemistry, 12(3) 674-677 (1973).
Sosinsky et al., “Hydrocarbon Complexes of Ruthenium. Part IV. Cyclic Dienyl Complexes”, J.C.S. Dalton Trans., 16-17, 1633-1640 (1975).
Takagi et al., “RuO2 Bottom Electrodes for Ferroelectric (Pb.La)(Zr,Ti)O3Thin Films by Metalorganic Chemical Vapor Deposition,” Jpn. J. Appl. Phys., 34:4104-4107 (1995).
Versteeg et al., “Metalorganic Chemical Vapor Deposition By Pulsed Liquid Injection Using An Ultrasonic Nozzle: Titanium Dioxide on Sapphire from Titanium (IV) Isopropoxide,”Journal of the American Ceramic Society, 78, 2763-2768 (1995).
Whitesides et al., “Cleavage of Carbon-Carbon Sigma Bonds by Ru3(CO)12”, J.C.S., C. Comm., 3, 87 (1973).
Yuan, “Low-Temperature Chemical Vapor Deposition of Ruthenium Dioxide form Ruthenium Tetroxide: A Simple Approach to High-Purity RuO2Films,”Chem. Mater., 5, 908 (1993).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Methods for preparing ruthenium and osmium compounds and films does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods for preparing ruthenium and osmium compounds and films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for preparing ruthenium and osmium compounds and films will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3377397

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.