Methods for preparing ruthenium and osmium compounds

Details Methods for preparing ruthenium and osmium compounds Methods for preparing ruthenium and osmium compounds

1998-08-27

1999-10-05

Nazario-Gonzalez, Porfirio

Organic compounds -- part of the class 532-570 series

Organic compounds

Heavy metal containing

556 28, 556136, 556137, 556 12, 4272481, C07F 1500, C07F 708, C07F 902

Patent

active

059627166

ABSTRACT:
The present invention provides methods for the preparation of compounds of the formula (Formula I):

REFERENCES:
patent: 5314727 (1994-05-01), McCormick et al.
patent: 5372849 (1994-12-01), McCormick et al.
patent: 5392189 (1995-02-01), Fazan et al.
patent: 5510651 (1996-04-01), Maniar et al.
patent: 5520992 (1996-05-01), Douglas et al.
patent: 5555486 (1996-09-01), Kingon et al.
patent: 5561307 (1996-10-01), Mihara et al.
patent: 5566045 (1996-10-01), Summerfelt et al.
patent: 5581436 (1996-12-01), Summerfelt et al.
Cowles et al., "Relative Reactivity of Co-ordinated Ligands inthe Chemical Commun., 392 (1969).
Green et al., "Chemical Vapor Deposition of Ruthenium and Ruthenium Dioxide Films," J. Electrochem. Soc., 132, 2677-2685 (1985).
Johnson et al., "Chemistry," Nature, 901-902 (1967).
Liao et al., "Characterization of RuO2 thin films deposited on Si by metal-organic chemical vapor deposition," Thin Solid Films, 287, 74-79 (1996).
Macchioni et al.,"Cationic Bis- and Tris(.eta.2-(pyrazol-1-y1)methane) Acetyl Complexes of Iron (II) and Ruthenium (II): Synthesis, Characterization, Reactivity, and Interionic Solution Structure by NOESY NMR Spectroscopy," Organometallics, 16, 2139-2145 (1997).
Shin, "Characterization of RuO.sub.2 Thin Films Prepared by Hot-Wall Metallorganic Chemical Vapor Deposition," J. Electrochem. Soc., 144, 1055 (1997).
Versteeg et al., "Metalorganic Chemical Vapor Deposition By Pulsed Liquid Injection Using An Ultrasonic Nozzle: Titanium Dioxide on Sapphire from Titanium (IV) Isopropoxide," Journal of the American Ceramic Society, 78, 2763-2768 (1995).
Yuan, "Low-Temperature Chemical Vapor Deposition of Ruthenium Dioxide form Ruthenium Tetroxide: A Simple Approach to High-Purity RuO.sub.2 Films," Chem. Mater., 5, 908 (1993).
Anderson et al., Organometallics, vol. 14, pp. 3516-3526, 1995.
Bennett et al., J.Chem. Soc. D., (7), pp. 341-342, 1971.

Affiliated with

Also associated with

Rating

Methods for preparing ruthenium and osmium compounds does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods for preparing ruthenium and osmium compounds, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for preparing ruthenium and osmium compounds will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1173383