Methods for preparing a bonding surface of a semiconductor...

Details Methods for preparing a bonding surface of a semiconductor... Methods for preparing a bonding surface of a semiconductor...

2011-04-05

2011-04-05

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S458000, C438S471000, C438S473000, C438S514000, C438S526000, C438S530000, C257SE21561, C257SE21567, C257SE21568, C257SE21570

Reexamination Certificate

active

07919391

ABSTRACT:
The invention concerns a method of treating one or both bonding surfaces of first and second substrates and in particular, the surfaces of donor and receiver wafers that are intended to be bonded together. A simultaneous cleaning and activation step is carried out immediately prior to bonding the wafers together, by applying to one or both bonding surfaces an activation solution of ammonia (NH4OH) in water, preferably deionized, at a concentration by weight in the range from about 0.05% to 2%. The method is applicable to fabricating structures used in the optics, electronics, or optoelectronics fields.

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