Methods for polishing a semiconductor topography

Details Methods for polishing a semiconductor topography Methods for polishing a semiconductor topography

2005-03-08

2005-03-08

Rose, Robert A. (Department: 3723)

Abrading

Abrading process

Glass or stone abrading

C451S037000

Reexamination Certificate

active

06863595

ABSTRACT:
A method is provided for processing a semiconductor topography. In an embodiment, the method includes polishing the topography on a primary polishing pad during a primary polishing step without depositing water on the primary polishing pad. The method may also include transferring the topography from the primary polishing pad to a final polishing pad. A substantial amount of residual slurry particles may be present on the topography while the topography is being transferred. In an embodiment, the method may also include polishing the topography on a final polishing pad during a final polishing step. The final polishing step may include depositing water on the final polishing pad in a plurality of dispense intervals to reduce a rate of change of a pH of a polishing solution on the topography.

REFERENCES:
patent: 5738574 (1998-04-01), Tolles et al.
patent: 5996594 (1999-12-01), Roy et al.
patent: 6130163 (2000-10-01), Yi et al.
patent: 6494985 (2002-12-01), Sotozaki et al.

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