Methods for planarizing a metal layer

Details Methods for planarizing a metal layer Methods for planarizing a metal layer

2007-03-20

2007-03-20

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C257SE21230

Reexamination Certificate

active

10935662

ABSTRACT:
Methods for planarizing a metal layer in a semiconductor device are disclosed. An illustrated example method comprises dividing a metal layer into a first section and a second section. A polishing removal rate associated with the first section is greater than a polishing removal rate associated with the second section. The method also includes forming an oxide layer on the first section of the metal layer; and planarizing the oxide layer and the metal layer using a chemical mechanical polishing process.

REFERENCES:
patent: 6207569 (2001-03-01), Schonauer et al.
patent: 6790763 (2004-09-01), Kondo et al.
patent: 2005/0026549 (2005-02-01), Maury et al.

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