Methods for planarization of Group VIII metal-containing...

Details Methods for planarization of Group VIII metal-containing... Methods for planarization of Group VIII metal-containing...

2006-05-23

2006-05-23

Guerrero, Maria F. (Department: 2822)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S650000, C438S686000, C438S693000

Reexamination Certificate

active

07049237

ABSTRACT:
A planarization method includes providing a second and/or third Group VIII metal-containing surface (preferably, a platinum-containing surface) and positioning it for contact with a polishing surface in the presence of a planarization composition that includes an oxidizing gas.

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