Methods for oriented growth of nanowires on patterned...

Coating processes – Coating by vapor – gas – or smoke

Reexamination Certificate

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C427S250000, C427S252000

Reexamination Certificate

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07951422

ABSTRACT:
The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors, as well as us of patterned substrates to grow oriented nanowires. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.

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