Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2008-04-01
2009-08-11
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S753000, C438S474000, C438S475000, C257SE21170, C257SE21102, C257SE21115, C257SE21319, C257SE21347
Reexamination Certificate
active
07572740
ABSTRACT:
A method for producing a Group IV semiconductor thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber, wherein the chamber further has a chamber pressure. The method further includes depositing a nanoparticle ink on the substrate, the nanoparticle ink including set of Group IV semiconductor nanoparticles and a solvent, wherein each nanoparticle of the set of Group IV semiconductor nanoparticles includes a nanoparticle surface, wherein a layer of Group IV semiconductor nanoparticles is formed. The method also includes striking a hydrogen plasma; and heating the layer of Group IV semiconductor nanoparticles to a fabrication temperature of between about 300° C. and about 1350° C., and between about 1 nanosecond and about 10 minutes; wherein the Group IV semiconductor thin film is formed.
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Berry et
Abbott Malcolm
Kelman Maxim
Meisel Andreas
Poplavskyy Dmitry
Schiff Eric
Foley & Lardner LLP
Innovalight, Inc.
Nhu David
LandOfFree
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