Static information storage and retrieval – Floating gate
Reexamination Certificate
2006-09-25
2009-11-03
Ho, Hoai V. (Department: 2827)
Static information storage and retrieval
Floating gate
C365S185190
Reexamination Certificate
active
07613041
ABSTRACT:
Methods and apparatus on charges injection using piezo-ballistic-charges injection mechanism are provided for semiconductor device and nonvolatile memory device. The device comprises a strain source, an injection filter, a first conductive region, a second conductive region, and a third conductive region. The strain source permits piezo-effect in ballistic charges transport to enable the piezo-ballistic-charges injection mechanism in device operations. The injection filter permits transporting of charge carriers of one polarity type from the first conductive region, through the filter, and through the second conductive region to the third conductive region while blocking the transport of charge carriers of an opposite polarity from the second conductive region to the first conductive region. The present invention further provides an energy band engineering method permitting the devices be operated without suffering from disturbs, from dielectric breakdown, from impact ionization, and from undesirable RC effects.
REFERENCES:
patent: 3943543 (1976-03-01), Caywood
patent: 3944849 (1976-03-01), Tasch, Jr. et al.
patent: 4072977 (1978-02-01), Bate et al.
patent: 4462090 (1984-07-01), Iizuka et al.
patent: 4698787 (1987-10-01), Mukherjee et al.
patent: 4957877 (1990-09-01), Tam et al.
patent: 5029130 (1991-07-01), Yeh
patent: 5053839 (1991-10-01), Esquivel et al.
patent: 5070480 (1991-12-01), Caywood
patent: 5095344 (1992-03-01), Harari
patent: 5115289 (1992-05-01), Hisamoto et al.
patent: 5146426 (1992-09-01), Mukherjee et al.
patent: 5153880 (1992-10-01), Owen et al.
patent: 5161157 (1992-11-01), Owen et al.
patent: 5235544 (1993-08-01), Caywood
patent: 5268319 (1993-12-01), Harari
patent: 5270980 (1993-12-01), Pathak et al.
patent: 5280446 (1994-01-01), Ma et al.
patent: 5286994 (1994-02-01), Ozawa et al.
patent: 5426316 (1995-06-01), Mohammad
patent: 5429965 (1995-07-01), Shimoji
patent: 5432739 (1995-07-01), Pein
patent: 5487033 (1996-01-01), Keeney et al.
patent: 5517044 (1996-05-01), Koyama et al.
patent: 5523243 (1996-06-01), Mohammad
patent: 5557122 (1996-09-01), Shrivastava et al.
patent: 5559735 (1996-09-01), Ono et al.
patent: 5563083 (1996-10-01), Pein
patent: 5621738 (1997-04-01), Caywood et al.
patent: 5714766 (1998-02-01), Chen et al.
patent: 5739567 (1998-04-01), Wong
patent: 5764096 (1998-06-01), Lipp et al.
patent: 5768192 (1998-06-01), Eitan
patent: 5780341 (1998-07-01), Ogura
patent: 5790455 (1998-08-01), Caywood
patent: 5792670 (1998-08-01), Pio et al.
patent: 5822242 (1998-10-01), Chen
patent: 5838039 (1998-11-01), Sato et al.
patent: 5847427 (1998-12-01), Hagiwara
patent: 5847996 (1998-12-01), Guterman et al.
patent: 5883409 (1999-03-01), Guterman et al.
patent: 5966329 (1999-10-01), Hsu et al.
patent: 5973356 (1999-10-01), Noble et al.
patent: 6002152 (1999-12-01), Guterman et al.
patent: 6080995 (2000-06-01), Nomoto
patent: 6088263 (2000-07-01), Liu et al.
patent: 6091104 (2000-07-01), Chen
patent: 6103573 (2000-08-01), Harari
patent: 6104057 (2000-08-01), Nakanishi et al.
patent: 6201732 (2001-03-01), Caywood
patent: 6211562 (2001-04-01), Forbes et al.
patent: 6303940 (2001-10-01), Kizilyalli et al.
patent: 6313487 (2001-11-01), Kencke et al.
patent: 6368915 (2002-04-01), Montree et al.
patent: 6372617 (2002-04-01), Kitamura
patent: 6384451 (2002-05-01), Caywood
patent: 6388922 (2002-05-01), Fujiwara et al.
patent: 6407424 (2002-06-01), Forbes
patent: 6411545 (2002-06-01), Caywood
patent: 6426896 (2002-07-01), Chen
patent: 6449189 (2002-09-01), Mihnea et al.
patent: 6451652 (2002-09-01), Caywood
patent: 6469343 (2002-10-01), Mura et al.
patent: 6479863 (2002-11-01), Caywood
patent: 6503785 (2003-01-01), Chen
patent: 6525371 (2003-02-01), Johnson
patent: 6525962 (2003-02-01), Pai et al.
patent: 6531731 (2003-03-01), Jones et al.
patent: 6534816 (2003-03-01), Caywood
patent: 6555865 (2003-04-01), Lee
patent: 6574140 (2003-06-01), Caywood
patent: 6580124 (2003-06-01), Cleeves et al.
patent: 6580642 (2003-06-01), Wang
patent: 6593624 (2003-07-01), Walker
patent: 6621107 (2003-09-01), Blanchard et al.
patent: 6680505 (2004-01-01), Ohba et al.
patent: 6709928 (2004-03-01), Jenne et al.
patent: 6721205 (2004-04-01), Kobayashi et al.
patent: 6727545 (2004-04-01), Wang
patent: 6734105 (2004-05-01), Kim
patent: 6743674 (2004-06-01), Wang
patent: 6744111 (2004-06-01), Wu
patent: 6745370 (2004-06-01), Segal et al.
patent: 6747310 (2004-06-01), Fan
patent: 6753568 (2004-06-01), Nakazato et al.
patent: 6756633 (2004-06-01), Wang et al.
patent: 6790727 (2004-09-01), Jones
patent: 6791883 (2004-09-01), Swift et al.
patent: 6815764 (2004-11-01), Bae et al.
patent: 6847556 (2005-01-01), Cho
patent: 6853583 (2005-02-01), Diorio et al.
patent: 6861698 (2005-03-01), Wang
patent: 6873006 (2005-03-01), Chen et al.
patent: 6894339 (2005-05-01), Fan et al.
patent: 6894343 (2005-05-01), Harari et al.
patent: 6897514 (2005-05-01), Kouznetsov et al.
patent: 6936884 (2005-08-01), Chae et al.
patent: 6952032 (2005-10-01), Forbes et al.
patent: 6952033 (2005-10-01), Kianian et al.
patent: 6953970 (2005-10-01), Yuan et al.
patent: 6958513 (2005-10-01), Wang
patent: 7015102 (2006-03-01), Wang
patent: 7018897 (2006-03-01), Wang
patent: 7074672 (2006-07-01), Kianian et al.
patent: 7115942 (2006-10-01), Wang
patent: 7149118 (2006-12-01), Diorio et al.
patent: 7190018 (2007-03-01), Chen et al.
patent: 7259984 (2007-08-01), Kan et al.
patent: 7274068 (2007-09-01), Forbest
patent: 2001/0029077 (2001-10-01), Noble et al.
patent: 2002/0179958 (2002-12-01), Kim
patent: 2003/0032243 (2003-02-01), Ogura et al.
patent: 2004/0021170 (2004-02-01), Caywood
patent: 2004/0160824 (2004-08-01), Kianian et al.
patent: 2004/0214396 (2004-10-01), Wang
patent: 2005/0167734 (2005-08-01), She et al.
patent: 2005/0247972 (2005-11-01), Forbes
patent: 2006/0284236 (2006-12-01), Bhattacharyya
patent: 2006/0289924 (2006-12-01), Wang
U.S. Appl. No. 09/860,704, filed Nov. 2003, Harari et al.
U.S. Appl. No. 09/866,938, filed Oct. 2001, Noble et al.
U.S. Appl. No. 10/066,376, filed Oct. 2002, Kouznetsov et al.
U.S. Appl. No. 10/205,289, filed Mar. 2003, Wang.
U.S. Appl. No. 10/393,896, filed Sep. 2004, Chen et al.
Caywood, John M. et al; “A Novel Nonvolatile Memory Cell Suitable for Both Flash and Byte-Writable Applications”; IEEE Transactions on Electron Devices, vol. 49, No. 5, May 2002; pp. 802-807.
H. Fujiwara et al; “High-Efficiency Programming with Inter-Gate Hot-Electron Injection for Flash . . . ,” Digest of Non-Volatile Semiconductor Memory Workshop, Feb. 2000; p. 127.
Kitamura et al; “A Low Voltage Operating Flash Cell with High Coupling Ratio Using Horned Floating Gate with Fine HSG”; 1998 Symposium on FLSI Technology Digest of Technical Papers; pp. 104-105.
Kuo et al; “FEFET—A High Density, Low Erase Voltage, Trench Flash EEPROM”; 1994 Symposium on VLSI Technology Digest of Technigal Papers; pp. 51-52.
Lai, Stefan; “Flash Memories: Where We Were and Where We Are Going”; 1998 IEEE; pp. 971-973.
Lenzlinger and Snow; Fowler-Nordheim Tunneling into Thermally Grown SiO2; J. Appl. Phys. vol. 40, No. 1; Jan. 1969; pp. 278-283.
M. Heiblum et al; “Direct Observation of ballistic Transport in GaAs,” pp. 2200-2203, vol. 55, Physical Review Letters; 1985.
Nicollian and Brews; “MOS Physics and Technology,” Wiley-Interscience, 1982, “Photo I-V method—Basics”; pp. 512-515.
S. Sze; “Physics of Semiconductor Devices”; Wiley-Interscience, 1981, “Schotky Effect”, pp. 250-253.
SMA5111—Compound Semiconductors; Lecture 2—Metal-Semiconductor Junctions—Outline; C. G. Fonstad; Feb. 2003; 22 pages.
Wang, Chih Hsin; “Three-Dimensional DIBL for Shallow-Trench Isolated MOSFET's”; IEEE Transactions on Electron Devices, vol. 46, No. 1, Jan. 1999; pp. 139-144.
U.S. Appl. No. 10/105,741, filed Sep. 25, 2003, Kianian, et al.
U.S. Appl. No. 10/192,291, filed Jul. 24, 2003, Wang.
U.S. Appl. No. 09/925,134, filed Jan. 1, 2004, Harari, et al.
U.S. Appl. No. 09/
Ho Hoai V.
Lappas Jason
LandOfFree
Methods for operating semiconductor device and semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods for operating semiconductor device and semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for operating semiconductor device and semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4137345