Static information storage and retrieval – Floating gate – Disturbance control
Reexamination Certificate
2007-10-09
2007-10-09
Nguyen, Viet Q. (Department: 2827)
Static information storage and retrieval
Floating gate
Disturbance control
C365S185290, C365S185240, C365S185180, C365S185250
Reexamination Certificate
active
11217952
ABSTRACT:
Methods for neutralizing holes in tunnel oxides of floating-gate memory cells and devices using a decrease in magnitude of a source voltage of a first polarity to increase the magnitude of a control gate voltage of a second polarity.
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Chen Chun
Mihnea Andrei
Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
Nguyen Viet Q.
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