Static information storage and retrieval – Floating gate – Disturbance control
Reexamination Certificate
2007-05-08
2007-05-08
Nguyen, Viet Q. (Department: 2827)
Static information storage and retrieval
Floating gate
Disturbance control
C365S185290, C365S185240, C365S185180, C365S185260
Reexamination Certificate
active
10875452
ABSTRACT:
Methods for neutralizing holes in tunnel oxides of floating-gate memory cells and devices using a decrease in magnitude of a source voltage of a first polarity to increase the magnitude of a control gate voltage of a second polarity.
REFERENCES:
patent: 4384349 (1983-05-01), McElroy
patent: 4503524 (1985-03-01), McElroy
patent: 5077691 (1991-12-01), Haddad et al.
patent: 5357463 (1994-10-01), Kinney
patent: 5399928 (1995-03-01), Lin et al.
patent: 5485423 (1996-01-01), Tang et al.
patent: 5521867 (1996-05-01), Chen et al.
patent: 5650964 (1997-07-01), Chen et al.
patent: 5726933 (1998-03-01), Lee et al.
patent: 5781477 (1998-07-01), Rinerson et al.
patent: 5808937 (1998-09-01), Chi et al.
patent: 5828605 (1998-10-01), Peng et al.
patent: 5862078 (1999-01-01), Yeh et al.
patent: 5917755 (1999-06-01), Rinerson et al.
patent: 5940325 (1999-08-01), Chang et al.
patent: 5949717 (1999-09-01), Ho et al.
patent: 5991195 (1999-11-01), Nobukata
patent: 6049484 (2000-04-01), Lee et al.
patent: 6049486 (2000-04-01), Lee et al.
patent: 6055183 (2000-04-01), Ho et al.
patent: 6097631 (2000-08-01), Guedj
patent: 6122201 (2000-09-01), Lee et al.
patent: 6172914 (2001-01-01), Haddad et al.
patent: 6236608 (2001-05-01), Ratnam
patent: 6243299 (2001-06-01), Rhinerson et al.
patent: 6285588 (2001-09-01), Fastow
patent: 6381670 (2002-04-01), Lee et al.
patent: 6570790 (2003-05-01), Harari
patent: 6614693 (2003-09-01), Lee et al.
patent: 6784480 (2004-08-01), Bhattacharyya
patent: 6894931 (2005-05-01), Yaegashi et al.
patent: 6903407 (2005-06-01), Kang
patent: 6914817 (2005-07-01), Harari
patent: 2003/0235080 (2003-12-01), Yaegashi et al.
patent: 2004/0196685 (2004-10-01), Miida
Lee et al., “Using Erase Self-Detrapped Effect To Eliminate the Flash Cell Program/Erase Cycling VthWindow Close,” IEEE, 1999.
Chen Chun
Mihnea Andrei
Leffert Jay & Polglaze P.A.
Nguyen Viet Q.
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