Methods for measuring the surface area of a semiconductor wafer

Details Methods for measuring the surface area of a semiconductor wafer Methods for measuring the surface area of a semiconductor wafer

1995-12-15

1996-11-26

Kunemund, Robert

Fishing, trapping, and vermin destroying

1566261, 427 8, 73 232, 73 2901, H01L 2166, H01L 21306, G01B 2128

Patent

active

055785050

ABSTRACT:
Methods for measuring the surface area of a top region of a silicon wafer by initially depositing a monolayer of hexamethyldisilizane over the surface area of the silicon wafer. The silicon wafer is then positioned within a vacuum environment. Next, oxygen is introduced into the vacuum chamber so that the HMDS substantially reacts with the oxygen to form products such as carbon dioxide and water. At least one of the water and the carbon dioxide are measured from the known volume of the vacuum chamber. Based on the amount of product formed, the amount of HMDS covering the surface area is determined. Finally, from the amount of HMDS calculated to be originally positioned on the surface area, a value for the surface area is determined.

REFERENCES:
patent: 3549368 (1970-12-01), Collins et al.

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