Methods for measuring surface area

Details Methods for measuring surface area Methods for measuring surface area

1996-11-22

1999-05-04

Bowers, Charles

Semiconductor device manufacturing: process

With measuring or testing

438780, 427 8, 73 232, 73 2901, 73 375, H01L 2166, H01L 21306, G01B 2128

Patent

active

058997024

ABSTRACT:
Methods for measuring the surface area of a top region of a silicon wafer by initially depositing a monolayer of hexamethyldisilizane over the surface area of the silicon wafer. The silicon wafer is then positioned within a vacuum environment. Next, oxygen is introduced into the vacuum chamber so that the HMDS substantially reacts with the oxygen to form products such as carbon dioxide and water. At least one of the water and the carbon dioxide are measured from the known volume of the vacuum chamber. Based on the amount of product formed, the amount of HMDS covering the surface area is determined. Finally, from the amount of HMDS calculated to be originally positioned on the surface area, a value for the surface area is determined.

REFERENCES:
patent: 3549368 (1970-12-01), Collins et al.
patent: 3884083 (1975-05-01), Lowell
patent: 4947677 (1990-08-01), Frye et al.
patent: 5501870 (1996-03-01), Shiraishi et al.
patent: 5578505 (1996-11-01), Nuttall et al.

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