Methods for manufacturing semiconductor devices and...

Details Methods for manufacturing semiconductor devices and... Methods for manufacturing semiconductor devices and...

2006-10-31

2006-10-31

Hu, Shouxiang (Department: 2811)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S221000, C438S296000

Reexamination Certificate

active

07129148

ABSTRACT:
A semiconductor device having trench isolation regions in which leaks are suppressed may be formed using the following steps. (a) Forming a trench32in a semiconductor layer12;(b) forming a dielectric layer40that fills the trench32;and (c) conducting a thermal treatment of the dielectric layer40,wherein the thermal treatment is conducted at temperatures of 1050° C. or higher.

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