Methods for manufacturing semiconductor devices

Details Methods for manufacturing semiconductor devices Methods for manufacturing semiconductor devices

2005-02-15

2005-02-15

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S221000

Reexamination Certificate

active

06855616

ABSTRACT:
A method of producing a semiconductor device, wherein after a trench is formed on a field region of a semiconductor substrate, an adsorption reaction of TEOS and a decomposition/recomposition reaction of TEOS using as a catalyst oxygen atoms decomposed from O3are independently and repeatedly performed. As disclosed, the oxide layer can be buried in the trench with a fine width without generating voids therein, increasing electrical property of the semiconductor device.

REFERENCES:
patent: 5731241 (1998-03-01), Jang et al.
patent: 6180490 (2001-01-01), Vassiliev et al.
patent: 6235608 (2001-05-01), Lin et al.
patent: 6562734 (2003-05-01), Kirchhoff

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