Methods for manufacturing low leakage current offset-gate thin f

Details Methods for manufacturing low leakage current offset-gate thin f Methods for manufacturing low leakage current offset-gate thin f

1994-01-18

1996-01-09

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437909, 437 41, H01L 21266, H01L 2184

Patent

active

054828708

ABSTRACT:
A thin film transistor structure and methods of manufacture provide high ON/OFF current ratio and significantly reduce OFF state leakage currents. A doped thin film disposed on an insulating substrate is etched to form opposing source and drain regions. An undoped thin film is disposed between the opposing source and drain regions so that there is some overlap of the undoped thin film onto the top sides of the source and drain regions. Conventional photomasking, etching and ion implantation steps are then used to form a gate electrode offset from at least the drain region, and preferably offset from both source and drain regions, as well as conventional insulation and interconnect layers. The reduction in electric field intensity in the drain region, and the reduction in trap state density result from, performing heavy junction doping prior to deposition of the undoped thin film, and offsetting the gate electrode from the drain region. This structure provides very low OFF state leakage current while not seriously affecting the ON current. Several alternative fabrication processes are disclosed.

REFERENCES:
patent: 4751196 (1988-06-01), Pennell et al.
patent: 4965213 (1990-10-01), Blake
Electron Device Letters, "Laser-Recrystallized Polycrystalline-Silicon Thin-Film Transistors with Low Leakage Current and High Switching Ratio", Shunji Seki, Osamu Kogure, and Bunjiro Tsujiyama, vol. EDL-8 No. 9, Sep. 1987, pp. 425-427.

Affiliated with

Also associated with

Rating

Methods for manufacturing low leakage current offset-gate thin f does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods for manufacturing low leakage current offset-gate thin f, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for manufacturing low leakage current offset-gate thin f will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1302627