Methods for manufacturing group IV element alloy semiconductor m

Details Methods for manufacturing group IV element alloy semiconductor m Methods for manufacturing group IV element alloy semiconductor m

1998-03-06

2000-03-14

Utech, Benjamin L.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

257188, 257441, 420556, 117108, 117939, H01L 310328, H01L 310336, H01L 31072, H01L 31109

Patent

active

060376147

ABSTRACT:
Sn.sub.x Ge.sub.1-x alloys that are substantially free of compositional inhomogeneities and Sn segregation, and have a measurable direct band gap. Methods for making the Sn.sub.x Ge.sub.1-x alloys are also disclosed.

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Ormer, B.A. et al., "Optical absorption in alloys of Si, Ge, C and Sn", Journal of Applied Physics, vol. 79 (11): 8656-8659, Jun. 1, 1996.
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He et al., "Synthesis of Epitaxial Sn.sub.x Ge.sub.1-x Alloy Films By Ion-assisted Molecular Beam Epitaxy", Nuclear Instruments and Methods in Physics Research B, 106:126-132 (1995).
He et al., "Interband Transitions in Sn.sub.x Ge.sub.1-x Alloys", Phys. Rev. Lett., 79(10):1937-1940 Sep. 8, 1997.
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