Methods for manufacturing a storage electrode of DRAM cells

Details Methods for manufacturing a storage electrode of DRAM cells Methods for manufacturing a storage electrode of DRAM cells

1995-04-03

1995-12-26

Thomas, Tom

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 218242

Patent

active

054787700

ABSTRACT:
A method for manufacturing a storage electrode of DRAM cells having a higher degree of integration in which the space between neighboring storage electrodes is made narrower than that obtainable by conventional lithographic techniques. The storage electrode is formed with a cylindrical, dual cylindrical, or jar-shaped structure to obtain a large surface area, and thus a high-capacitance.

REFERENCES:
patent: 5192702 (1993-03-01), Tseng
patent: 5219780 (1995-06-01), Jun

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