Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-11-28
2006-11-28
Sarkar, Asok K. (Department: 2891)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S687000, C438S690000, C438S691000, C438S695000, C257SE21494, C257SE21271
Reexamination Certificate
active
07141503
ABSTRACT:
A method for forming a pre-metallization layer on an underlying micro-structure, and a corresponding micro-structure formed by the method. The micro-structure may be a semiconductor circuit and/or a Micro-Electro-Mechanical Systems (MEMS) device. A first layer of undoped silicate glass is deposited on a micro-structure. Then, a layer of phospho silicate glass is deposited on the first layer of undoped silicate glass. This combination is then densified by applying a temperature to the combination that is sufficient to densify the layer of phospho-silicate glass, while being below the glass flow temperature. After densification, a second layer of undoped silicate glass is deposited on the densified layer of phospho silicate glass. Finally, the upper surface of the second layer of undoped silicate glass is polished using a chemical mechanical polishing process. The result is a dielectric layer of high density and low stress, and that reduces soft errors and defects.
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Naughton John
Nelson Mark M.
AMI Semiconductor, Inc
Sarkar Asok K.
Workman Nydegger
Yevsikov Victor V.
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