Methods for manufacturing a hybrid integrated circuit device

Details Methods for manufacturing a hybrid integrated circuit device Methods for manufacturing a hybrid integrated circuit device

2007-07-31

2007-07-31

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

C438S462000, C438S465000

Reexamination Certificate

active

10421921

ABSTRACT:
In preferred embodiments, a method of manufacturing a hybrid integrated circuit device is provided, in which a plurality of circuit substrates10are manufactured from a single metal substrate10A′ by dicing. In some embodiments, the method includes: preparing a metal substrate10A′ having an insulating layer11formed on the top surface thereof; forming a plurality of conductive patterns12on the top surface of insulating layer11; forming grooves20in lattice form on the rear surface of metal substrate10B′; mounting hybrid integrated circuits onto conductive patterns12; and separating individual circuit substrates10with, for example, a rotatable cutter.

REFERENCES:
patent: 5194877 (1993-03-01), Lam et al.
patent: 2002/0168796 (2002-11-01), Shimanuki et al.
patent: 2003/0127428 (2003-07-01), Fujii et al.
patent: 2003/0194168 (2003-10-01), Ouchi

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