Methods for making VLSI capacitors and high Q VLSI inductors usi

Details Methods for making VLSI capacitors and high Q VLSI inductors usi Methods for making VLSI capacitors and high Q VLSI inductors usi

1998-09-22

2000-11-14

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making passive device

438622, 438637, H01L 2120

Patent

active

061469580

ABSTRACT:
Disclosed are methods of making inductors and capacitors, comprising filling a via in a dielectric disposed between two metal layers with a metal plug. The plug comprises tungsten, aluminum or copper and extends the length of the metal layers. The plug connects the two metal layers to form the inductor. Two plugs can be formed so as to connect the two metal layers so as to form a parallel plate capacitor.

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