Semiconductor device manufacturing: process – Making passive device – Trench capacitor
Patent
1998-03-31
2000-01-04
Bowers, Charles
Semiconductor device manufacturing: process
Making passive device
Trench capacitor
438381, 438800, H01L 2120
Patent
active
060109394
ABSTRACT:
Disclosed is a capacitive structure and method for making the capacitive structure for suppressing inductive noise produced by high performance device power supplies. The capacitive structure includes a trench having a bottom surface and respective walls that are integral with the bottom surface. The trench is defined in a semiconductor substrate and is configured to isolate at least one transistor active area from another transistor active area. The structure further includes an oxide layer that is defined along the bottom surface and the respective walls of the trench, such that a channel is defined within the trench between the oxide layer that is defined along the bottom surface and the respective walls. The structure also includes a conductive polysilicon layer that is defined within the channel and is within the trench. The conductive polysilicon layer defines a conductive electrode that is separated from the semiconductor substrate by a thickness of the oxide layer.
REFERENCES:
patent: 4812962 (1989-03-01), Witt
patent: 5389559 (1995-02-01), Hsieh et al.
patent: 5475766 (1995-12-01), Tsuchiya et al.
patent: 5553273 (1996-09-01), Liebmann
Bowers Charles
Thompson Craig
VLSI Technology Inc.
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