Methods for making and using a shallow semiconductor junction

Details Methods for making and using a shallow semiconductor junction Methods for making and using a shallow semiconductor junction

1994-03-31

1995-01-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437176, 437934, 437950, H01L 21265

Patent

active

053842693

ABSTRACT:
A method for making a shallow junction in a gallium arsenide substrate including implanting doping ions into an upper surface of the substrate and incorporating sulfur into the upper surface of the substrate after the ion implantation. A capping layer is deposited on the upper surface and the substrate is heat annealed to activate the doping atoms.

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Anderson et al., "Ohmic contacts to GaAs . . . ", Conf. paper at Ohmic Contacts, Mar. 1981, pp. 39-42.
Howes et al., "Gallium Arsenide, materials devices & circuits", 1985, pp. 163-165.

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