Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Metallic housing or support
Reexamination Certificate
2005-12-16
2008-11-04
Parekh, Nitin (Department: 2811)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Metallic housing or support
C438S112000, C438S122000, C438S127000, C257S660000, C257SE23114
Reexamination Certificate
active
07445968
ABSTRACT:
In order to achieve electromagnetic and/or thermal isolation between components in close proximity to each other on a common module substrate, an alternate package and method for manufacturing the package is provided.Inventive methods utilize a grounded, metal-coated overmold for a IC module package that can provide an alternate thermal path to heat sink high power components generating excess heat energy and/or provide general electromagnetic shielding and isolation between two integrated circuits in very close proximity that are susceptible to electromagnetic interference.A dielectric layer conformably covers semiconductor dies mounted on a substrate. On some semiconductor dies, a portion of the dielectric layer is removed from the back surface of the semiconductor dies to allow direct contact between the exposed back surface of the dies and a metallization layer forming part of the overmold. This direct contact allows heat energy to be drawn away from the dies. The metallization layer also acts to shield the dies from disruptive electromagnetic energy radiated from other dies in close proximity.
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Harrison Jose
Nunns Nicholas
Vaillancourt William
Parekh Nitin
SiGe Semiconductor (U.S.), Corp.
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