Methods for increasing photo-alignment margins

Details Methods for increasing photo-alignment margins Methods for increasing photo-alignment margins

2007-09-11

2007-09-11

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

C438S708000, C438S947000, C257SE21023

Reexamination Certificate

active

11497490

ABSTRACT:
Methods and structures are provided for increasing alignment margins when contacting pitch multiplied interconnect lines with other conductive features in memory devices. The portions of the lines at the periphery of the memory device are formed at an angle and are widened relative to the portions of the lines in the array region of the memory device. The widened lines allow for an increased margin of error when overlaying other features, such as landing pads, on the lines. The possibility of contacting and causing electrical shorts with adjacent lines is thus minimized. In addition, forming the portions of the lines in the periphery at an angle relative to the portions of the lines in the array regions allows the peripheral portions to be widened while also allowing multiple landing pads to be densely packed at the periphery.

REFERENCES:
patent: 4234362 (1980-11-01), Riseman
patent: 4419809 (1983-12-01), Riseman et al.
patent: 4432132 (1984-02-01), Kinsbron et al.
patent: 4502914 (1985-03-01), Trumpp et al.
patent: 4508579 (1985-04-01), Goth et al.
patent: 4570325 (1986-02-01), Higuchi
patent: 4648937 (1987-03-01), Ogura et al.
patent: 4716131 (1987-12-01), Okazawa et al.
patent: 4776922 (1988-10-01), Bhattascharyya et al.
patent: 4838991 (1989-06-01), Cote et al.
patent: 5047117 (1991-09-01), Roberts
patent: 5053105 (1991-10-01), Fox, III
patent: 5117027 (1992-05-01), Bernhardt et al.
patent: 5328810 (1994-07-01), Lowrey et al.
patent: 5330879 (1994-07-01), Dennison
patent: 5514885 (1996-05-01), Myrick
patent: 5670794 (1997-09-01), Manning
patent: 5753546 (1998-05-01), Koh et al.
patent: 5795830 (1998-08-01), Cronin et al.
patent: 5998256 (1999-12-01), Juengling
patent: 6004862 (1999-12-01), Kim et al.
patent: 6010946 (2000-01-01), Hisamune et al.
patent: 6042998 (2000-03-01), Brueck et al.
patent: 6063688 (2000-05-01), Doyle et al.
patent: 6071789 (2000-06-01), Yang et al.
patent: 6211044 (2001-04-01), Xiang et al.
patent: 6291334 (2001-09-01), Somekh
patent: 6297554 (2001-10-01), Lin
patent: 6348380 (2002-02-01), Weimer et al.
patent: 6362057 (2002-03-01), Taylor, Jr. et al.
patent: 6383907 (2002-05-01), Hasegawa et al.
patent: 6395613 (2002-05-01), Juengling
patent: 6423474 (2002-07-01), Holscher
patent: 6455372 (2002-09-01), Weimer
patent: 6475867 (2002-11-01), Hui et al.
patent: 6522584 (2003-02-01), Chen et al.
patent: 6548396 (2003-04-01), Naik et al.
patent: 6566280 (2003-05-01), Meagley et al.
patent: 6573030 (2003-06-01), Fairbairn et al.
patent: 6602779 (2003-08-01), Li et al.
patent: 6632741 (2003-10-01), Clevenger et al.
patent: 6638441 (2003-10-01), Chang et al.
patent: 6673684 (2004-01-01), Huang et al.
patent: 6689695 (2004-02-01), Lui et al.
patent: 6706571 (2004-03-01), Yu et al.
patent: 6709807 (2004-03-01), Hallock et al.
patent: 6734107 (2004-05-01), Lai et al.
patent: 6744094 (2004-06-01), Forbes
patent: 6773998 (2004-08-01), Fisher et al.
patent: 6794699 (2004-09-01), Bissey et al.
patent: 6800930 (2004-10-01), Jackson et al.
patent: 6875703 (2005-04-01), Furukawa et al.
patent: 6893972 (2005-05-01), Rottstegge et al.
patent: 6955961 (2005-10-01), Chung
patent: 6962867 (2005-11-01), Jackson et al.
patent: 2001/0005631 (2001-06-01), Kim et al.
patent: 2002/0042198 (2002-04-01), Bjamason et al.
patent: 2002/0045308 (2002-04-01), Juengling
patent: 2002/0063110 (2002-05-01), Cantell et al.
patent: 2002/0127810 (2002-09-01), Nakamura et al.
patent: 2003/0006410 (2003-01-01), Doyle
patent: 2003/0044722 (2003-03-01), Hsu et al.
patent: 2003/0119307 (2003-06-01), Bekiaris et al.
patent: 2003/0127426 (2003-07-01), Chang et al.
patent: 2003/0157436 (2003-08-01), Manger et al.
patent: 2003/0207207 (2003-11-01), Li
patent: 2003/0207584 (2003-11-01), Sivakumar et al.
patent: 2003/0230234 (2003-12-01), Nam et al.
patent: 2004/0000534 (2004-01-01), Lipinski
patent: 2004/0018738 (2004-01-01), Liu
patent: 2004/0023475 (2004-02-01), Bonser et al.
patent: 2004/0023502 (2004-02-01), Tzou et al.
patent: 2004/0041189 (2004-03-01), Voshell et al.
patent: 2004/0043623 (2004-03-01), Liu et al.
patent: 2004/0053475 (2004-03-01), Sharma
patent: 2004/0079988 (2004-04-01), Harari
patent: 2004/0106257 (2004-06-01), Okamura et al.
patent: 2004/0235255 (2004-11-01), Tanaka et al.
patent: 2005/0164454 (2005-07-01), Leslie
patent: 2005/0186705 (2005-08-01), Jackson et al.
patent: 2006/0046200 (2006-03-01), Abatchev et al.
patent: 2006/0046201 (2006-03-01), Sandhu et al.
patent: 2006/0046422 (2006-03-01), Tran et al.
patent: 2006/0046484 (2006-03-01), Abatchev et al.
patent: 2006/0211260 (2006-09-01), Tran et al.
patent: 2006/0216923 (2006-09-01), Tran et al.
patent: 2006/0231900 (2006-10-01), Lee et al.
patent: 2006/0263699 (2006-11-01), Abatchev et al.
patent: 2006/0267075 (2006-11-01), Sandhu et al.
patent: 2006/0273456 (2006-12-01), Sant et al.
patent: 2006/0281266 (2006-12-01), Wells
patent: 2007/0026672 (2007-02-01), Tang et al.
patent: 2007/0045712 (2007-03-01), Haller et al.
patent: 2007/0048674 (2007-03-01), Wells
patent: 2007/0049011 (2007-03-01), Tran
patent: 2007/0049030 (2007-03-01), Sandhu et al.
patent: 2007/0049032 (2007-03-01), Abatchev et al.
patent: 2007/0049035 (2007-03-01), Tran
patent: 2007/0049040 (2007-03-01), Bal et al.
patent: 2007/0050748 (2007-03-01), Juengling
patent: 280851 (1990-07-01), None
patent: 42 36 609 (1994-05-01), None
patent: 0227303 (1987-07-01), None
patent: 0491408 (1992-06-01), None
patent: 1357433 (2003-10-01), None
patent: 05343370 (1993-12-01), None
patent: H8-55908 (1996-02-01), None
patent: H8-55920 (1996-02-01), None
patent: WO 02/099864 (2002-12-01), None
patent: WO 2004/001799 (2003-12-01), None
patent: WO 2004/003977 (2004-01-01), None
patent: WO 2005/010973 (2005-02-01), None
patent: WO 2006/026699 (2006-03-01), None
Bergeron et al., “Resolution Enhancement Techniques for the 90nm Technology Node and Beyond,”Future Fab International, Issue 15, 4 pages (Jul. 11, 2003).
Bhave et al., “Developer-soluble Gap fill materials for patterning metal trenches in Via-first Dual Damascene process,” preprint ofProceedings of SPIE: Advances in Resist Technology and Processing XXI, vol. 5376, John L. Sturtevant, editor, 8 pages (2004).
Chung et al., “Pattern multiplication method and the uniformity of nanoscale multiple lines*,”J. Vac. Sci. Technol. B21(4), pp. 1491-1495 (Jul./Aug. 2003).
Chung et al.“Nanoscale Multi-Line Patterning Using Sidewall Structure,”Jpn., J. App.. Phys. vol. 41 Pt. 1, No. 6B, pp. 4410-4414 (2002).
Joubert et al. “Nanometer scale linewidth control during etching of polysilicon gates in high-density plasmas,” Microelectronic Engineering 69, pp. 350-357 (2003).
Oehrlein et al. “Pattern transfer into low dielectic materials by high-density plasma etching,” Solid State Tech., 8 pages (May 2000).
U.S. Appl. No. 11/543,515, filed Oct. 24, 2006, MICRON Ref. No. 2005-1173.00/US.
Ex Parte Cantell, unpublished decision of the Board of Patent Appeals and Interferences, Mar. 4, 2005.

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