Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1997-08-20
1999-02-16
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 15, 117 30, 117 32, 117917, C30B 1532
Patent
active
058715789
ABSTRACT:
Oscillation of a growing crystal is suppressed in a Czochralski method when part of the growing crystal is mechanically held. Methods for holding and pulling a single crystal in a Czochralski method, wherein a seed crystal is pulled while rotating after the seed crystal is contacted with a raw material melt, part of the growing single crystal is mechanically held during pulling and the single crystal of heavy weight can be pulled regardless of mechanical strengths of the seed crystal or a neck portion thereof, wherein the raw material melt is under application of a magnetic field thereto when the growing crystal is mechanically held.
Iida Makoto
Iino Eiichi
Kimura Masanori
Muraoka Shozo
Hiteshew Felisa
Shin-Etsu Handotai & Co., Ltd.
LandOfFree
Methods for holding and pulling single crystal does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods for holding and pulling single crystal, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for holding and pulling single crystal will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2058703