Methods for forming varactor diodes

Semiconductor device manufacturing: process – Voltage variable capacitance device manufacture

Reexamination Certificate

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C257SE21364

Reexamination Certificate

active

07919382

ABSTRACT:
An improved varactor diode (40) is obtained by providing a substrate (70) having a first surface (73) and in which are formed a first N region (46) having a first peak dopant concentration (47) located at a first depth (48) beneath the surface (73), and a first P region49having a second peak dopant concentration (50) greater than the first peak dopant concentration located at a second depth (51) beneath the surface less than the first depth (48), and a second P region (42) having a third peak dopant concentration (43) greater than the second peak dopant concentration and located at a third depth at or beneath the surface (73) less than the second depth (51), so that the first P region (49) provides a retrograde doping profile whose impurity concentration increases with distance from the inward edge (44) of the second P region (42) up to the second peak dopant concentration (50).

REFERENCES:
patent: 4106953 (1978-08-01), Onodera
patent: 4827319 (1989-05-01), Pavlidis et al.
patent: 5557140 (1996-09-01), Nguyen et al.
patent: 5747865 (1998-05-01), Kim et al.
patent: 6559024 (2003-05-01), Boles et al.
patent: 6825546 (2004-11-01), Walker et al.
patent: 7135375 (2006-11-01), Coolbaugh et al.

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