Methods for forming trench isolation

Details Methods for forming trench isolation Methods for forming trench isolation

2008-09-30

2008-09-30

Smith, Bradley K (Department: 2891)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S424000, C257SE21546

Reexamination Certificate

active

11156998

ABSTRACT:
A method of forming an isolation film in a semiconductor device is disclosed. The disclosed method includes performing a patterning process on a predetermined region of a semiconductor substrate in which a patterned pad film is formed, forming a trench defining an inactive region and an active region, forming a liner film on the entire surface including the trench, forming an insulating film for trench burial only within the trench, stripping the remaining liner film formed except for the inside of the trench and the patterned pad film formed below the liner film, forming a sacrificial film on the entire surface, and performing a polishing process on the entire surface in which the sacrificial film is formed until the semiconductor substrate of the active region is exposed, thereby forming the isolation film having no topology difference with the semiconductor substrate of the active region.

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Official action issued by the China State Intellectual Property Office in counterpart Chinese patent application 2005/10091052.5 filed Aug. 4, 2005.
Taiwanese offical action dated Apr. 10, 2008, in corresponding Taiwanese application No. 94120981 (and English-language translation thereof).

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