Methods for forming thin-film heterojunction solar cells from I-

Details Methods for forming thin-film heterojunction solar cells from I- Methods for forming thin-film heterojunction solar cells from I-

1984-06-14

1985-08-13

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136264, 136265, 427 76, 4272552, 148174, 148178, 357 16, 357 30, H01L 3106, H01L 3118

Patent

active

RE0319686

ABSTRACT:
An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the

REFERENCES:
patent: 3110620 (1963-11-01), Bertelsen
patent: 3186874 (1965-06-01), Gorski
patent: 3316386 (1967-04-01), Yaffe et al.
patent: 3436625 (1969-04-01), Newman
patent: 3446936 (1969-05-01), Hanson et al.
patent: 3447234 (1969-06-01), Reynolds et al.
patent: 3449092 (1969-06-01), Hammond
patent: 3508126 (1970-04-01), Newman et al.
patent: 3531335 (1970-09-01), Heyerdahl
patent: 3565686 (1971-02-01), Babcock et al.
patent: 3612859 (1971-10-01), Schumacher
patent: 3636916 (1972-01-01), Thelen
patent: 3647197 (1972-03-01), Holloway
patent: 3654109 (1972-04-01), Hohl
patent: 3716406 (1973-02-01), Scholl et al.
patent: 3716424 (1973-02-01), Schoolar
patent: 3793070 (1974-02-01), Schoolar
patent: 3914856 (1975-10-01), Fang
patent: 3978510 (1976-08-01), Kasper et al.
patent: 4004342 (1977-01-01), Park et al.
patent: 4024376 (1977-05-01), Redel
patent: 4036167 (1977-07-01), Lu
patent: 4046565 (1977-09-01), Miller
patent: 4059067 (1977-11-01), Lardon et al.
patent: 4063974 (1977-12-01), Fraas
patent: 4086101 (1978-04-01), Jordan et al.
patent: 4101341 (1978-07-01), Selders
patent: 4251287 (1981-02-01), Dalal
patent: 4313254 (1982-02-01), Feldman
R. D. Tomlinson et al., "Some Observations on the Effect of Evaporation Source Temperature on the Composition of CuInSe.sub.2 Thin Films", Thin Solid Films, vol. 64, pp. L3-L6 (1979).
Kazmerski, The Utilization of I-II-VI.sub.2 Ternary Compound Semiconductors In Thin-Film Heterojunction and Homojunction Photovoltaic Devices, Inst. Phys. Conf. Ser. No. 35, pp. 217-228 (1977).
Don et al., Copper Indium Diselenide For CdS: CuInSe.sub.2 Solar Cells, European Community Photovoltaic Solar Energy Conference, Cannes, France, pp. 879-901 (Oct. 1980).
L. Kazmerski et al., "Auger Analysis of CdS-CuInSe.sub.2 Thin-Film Solar Cells", IEEE Trans. Electron Devices, vol. Ed-24, pp. 496-498 (1977).
H. Neumann et al., "Structural and Electrical Properties of CuInSe.sub.2 Epitaxial Layers Prepared by Single Source Evaporation", Thin Solid Films, vol. 74, pp. 197-204 (1980).
R. Durny et al., "Preparative of Amorphous CuInSe.sub.2 Thin Films", Thin Solid Films, vol. 69, pp. L11-L13 (1980).
L. Kazmerski et al., "CuInS.sub.2 Thin-Film Homojunction Solar Cells", J. Appl. Phys., vol. 48, pp. 3178-3180 (1977).
L. Kazmerski et al., "The Performance of Copper-Ternary Based Thin-Film Solar Cells", Conf. Record, 13th IEEE Photovohaic Specialists Conf. (1978), pp. 184-189.
L. Kazmerski et al., "Fabrication and Characterization of ITO/CuInSe.sub.2 Photovoltaic Heterojunctions", Conf. Record, 13th IEEE Photovoltaic Specialists Conf. (1978), pp. 541-544.
F. R. White et al., "Growth of CuInSe.sub.2 on CdS Using Molecular Beam Epitaxy", J. Appl. Phys., vol. 50, pp. 544-545 (1979).
A. R. Tebo, "Solar Cells", Electro-Optical Systems Design, May 1980, pp. 39-49.
R. A. Mickelsen et al., "High Photocurrent Polycrystalline Thin-Film CdS/CuInSe.sub.2 Solar Cell", Appl. Phys. Lett., vol. 36, pp. 371-373 (Mar. 1980).
W. S. Chen et al., "Thin-Film CdS/CuInSe.sub.2 Heterojunction Solar Cell", Proc. 24th Annual Photooptical Eng. Symposium (1980).
R. A. Mickelsen et al., "Development of A 9.4% Efficient Thin-Film CuInSe.sub.2 /CdS Solar Cell", IEEE Photovoltaic Specialists Conf. (1981).
J. L. Shay et al., "Efficient CuInSe.sub.2 /CdS Solar Cells", Appl. Phys. Lett., vol. 27, pp. 89-90 (1975).
B. Tell et al., "Motion of p-n Junctions in CuInSe.sub.2 ", Appl. Phys. Lett., vol. 28, pp. 454-455 (1976).
B. Tell et al., "Photovoltaic Properties and Junction Formation in CuInSe.sub.2 ", J. Appl. Phys., vol. 48, pp. 2477-2480 (1977).
B. Tell et al., "Photovoltaic Properties of p-n Junctions in CuInS.sub.2 ", J. Appl. Phys., vol. 50, pp. 5045-5046 (1979).
F. R. White et al., "Growth of CuInSe.sub.2 Films Using Molecular Beam Epitaxy", J. Vac. Sci. Technol., vol. 16, pp. 287-289 (1979).
S. Wagner et al., "Multicomponent Tetrahedral Compounds for Solar Cells", J. Crystal Growth, vol. 39, pp. 151-159 (1977).
S. Wagner et al., "CuInSe.sub.2 /CdS Heterojunction Photovoltaic Detectors", Appl. Phys. Lett., vol. 25, pp. 434-435 (1974).
J. L. Shay et al., "Preparation and Properties of InP/CdS and CuInSe.sub.2 /CdS Solar Cells", Conf. Record, 11th IEEE Photovoltaic Specialists Conf. (1975), pp. 503-507.
S. Wagner et al., "p-InP
-CdS Solar Cells and Photovoltaic Detectors", Appl. Phys. Lett., vol. 26, pp. 229-230 (1975).
L. Kazmerski et al., "Ternary Compound Thin Film Solar Cells", Final Report NSF/RANN/SE/AER 75-19576/PR75/4 Oct. 1976.
L. Kazmerski et al., "Thin-Film CuInSe.sub.2 /CdS Heterojunction Solar Cells", Appl. Phys. Lett., vol. 29, pp. 268-270 (1976).
L. Kazmerski et al., "Growth and Characterization of Thin-Film Compound Semiconductor Photovoltaic Heterojunctions", J. Vac. Sci. Technol., vol. 14, pp. 65-68 (1977).
L. Kazmerski et al., "Auger Electron Spectroscopy Studies of I-III-VI.sub.2 Chalcopyrite Compounds", J. Vac. Sci Technol., vol. 15, pp. 249-253 (1978).
A. H. Clark, "Molecular Beam Epitaxy Research on CuInSe.sub.2 ", Proc. SERI Review Meeting (Oct. 1978), pp. 385-392.
Y. Kokubun et al., "Photovoltaic Effect in CuInSe.sub.2 /CdS Heterojunctions", Japan J. Appl. Phys., vol 16, pp. 879-880 (1977).
M. S. Tomar et al., "ZnCdS/CuInSe.sub.2 & CdS/ZnIn.sub.2 Se.sub.4 Thin Film Solar Cells", International Electron Device Meeting, Wash. D.C. (1978).
D. Fleming, "Cadmium Sulfide/Copper Ternary Heterojunction Cell Research", SERI Review Meeting Proc. (1978), pp. 393-420.
J. Piekoszewski et al., "RF Sputtered CuInSe.sub.2 Thin Films", Conf. Record, 14th IEEE Photovoltaic Specialists Conf. (1980), pp. 980-985.
K. W. Mitchell, "Evaluation of the CdS/CdTe Heterojunction Solar Cell", Garland Pub. Co., New York (1979), pp. 36-42.

Affiliated with

Also associated with

Rating

Methods for forming thin-film heterojunction solar cells from I- does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods for forming thin-film heterojunction solar cells from I-, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for forming thin-film heterojunction solar cells from I- will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2310171