Semiconductor device manufacturing: process – Direct application of electrical current – Electromigration
Reexamination Certificate
2011-03-29
2011-03-29
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Direct application of electrical current
Electromigration
C438S088000, C438S351000
Reexamination Certificate
active
07915144
ABSTRACT:
The present disclosure relates to methods of forming solid state thermal engines that provides a closely-spaced thermal tunneling gap between a hot and cold electrode. The effective gap may be on the order of one nanometer. In one embodiment, a via is etched through a first side of first and second substrates, and metal electrodes are attached to a second side of the first and second substrates. The second sides are opposite the first sides. The metal electrodes are mated by bonding the second side of the first substrate to the second side second substrate. The gap may be formed by applying a voltage greater than a threshold voltage across the mated electrodes.
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Perkins Pamela E
Smith Zandra
The Boeing Company
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