Methods for forming semiconductor devices including thermal...

Details Methods for forming semiconductor devices including thermal... Methods for forming semiconductor devices including thermal...

2007-02-06

2007-02-06

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C257SE21008

Reexamination Certificate

active

10629430

ABSTRACT:
Methods for fabricating semiconductor memory devices may include forming a first conductive layer for a first electrode on a semiconductor substrate, forming a dielectric layer on the first conductive layer, and forming a second conductive layer for a second electrode on the dielectric layer. Portions of the second conductive layer and the dielectric layer can be removed, and a thermal process can be performed on the second conductive layer and the dielectric layer. The thermal process can reduce interface stress between the second conductive layer and the dielectric layer and/or cure the dielectric layer. In addition, the dielectric layer may be maintained in an amorphous state during and after the thermal process.

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patent: P2001-0020024 (2001-03-01), None
Korean Patent Office, Notice to Submit Response, May 31, 2004.

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