Methods for forming semiconducting device with titanium...

Details Methods for forming semiconducting device with titanium... Methods for forming semiconducting device with titanium...

2006-08-14

2009-02-03

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S253000, C438S396000, C438S785000, C438S798000

Reexamination Certificate

active

07485473

ABSTRACT:
A method for manufacturing a semiconductor device, the method including the steps of: (a) forming a titanium layer above a substrate; (b) forming a barrier layer above the titanium layer; (c) changing the titanium layer to a titanium nitride layer by conducting a heat treatment in a nitrogen containing atmosphere; (d) forming a first electrode above the barrier layer; (e) forming a ferroelectric layer above the first electrode; and (f) forming a second electrode above the ferroelectric layer.

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