Semiconductor device manufacturing: process – Having metal oxide or copper sulfide compound semiconductor...
Reexamination Certificate
2011-07-12
2011-07-12
Geyer, Scott B (Department: 2812)
Semiconductor device manufacturing: process
Having metal oxide or copper sulfide compound semiconductor...
C438S678000, C257SE21078, C257SE21158
Reexamination Certificate
active
07977153
ABSTRACT:
Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed from resistive-switching metal oxide layers. Metal oxide layers may be formed using sputter deposition at relatively low sputtering powers, relatively low duty cycles, and relatively high sputtering gas pressures. Dopants may be incorporated into a base oxide layer at an atomic concentration that is less than the solubility limit of the dopant in the base oxide. At least one oxidation state of the metal in the base oxide is preferably different than at least one oxidation state of the dopant. The ionic radius of the dopant and the ionic radius of the metal may be selected to be close to each other. Annealing and oxidation operations may be performed on the resistive switching metal oxides. Bistable metal oxides with relatively large resistivities and large high-state-to-low state resistivity ratios may be produced.
REFERENCES:
patent: 2008/0185572 (2008-08-01), Chiang et al.
Barstow Sean
Chiang Tony
Kumar Pragati
Malhotra Sandra G.
Geyer Scott B
Intermolecular, Inc.
Nikmanesh Seahvosh J
LandOfFree
Methods for forming resistive-switching metal oxides for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods for forming resistive-switching metal oxides for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for forming resistive-switching metal oxides for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2723166