Semiconductor device manufacturing: process – Having metal oxide or copper sulfide compound semiconductor...
Reexamination Certificate
2011-01-04
2011-01-04
Geyer, Scott B (Department: 2812)
Semiconductor device manufacturing: process
Having metal oxide or copper sulfide compound semiconductor...
C438S678000, C257SE21078, C257SE21158
Reexamination Certificate
active
07863087
ABSTRACT:
Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed from resistive-switching metal oxide layers. Metal oxide layers may be formed using sputter deposition at relatively low sputtering powers, relatively low duty cycles, and relatively high sputtering gas pressures. Dopants may be incorporated into a base oxide layer at an atomic concentration that is less than the solubility limit of the dopant in the base oxide. At least one oxidation state of the metal in the base oxide is preferably different than at least one oxidation sate of the dopant. The ionic radius of the dopant and the ionic radius of the metal may be selected to be close to each other. Annealing and oxidation operations may be performed on the resistive switching metal oxides. Bistable metal oxides with relatively large resistivities and large high-state-to-low state resistivity ratios may be produced.
REFERENCES:
patent: 6034882 (2000-03-01), Johnson et al.
patent: 6815744 (2004-11-01), Beck et al.
patent: 6906939 (2005-06-01), Rinerson et al.
patent: 6957757 (2005-10-01), Shepard
patent: 2002/0074584 (2002-06-01), Yang
patent: 2006/0054950 (2006-03-01), Baek et al.
patent: 2006/0073657 (2006-04-01), Herner et al.
patent: 2006/0097288 (2006-05-01), Baek et al.
patent: 2006/0098472 (2006-05-01), Ahn et al.
patent: 2006/0109704 (2006-05-01), Seo et al.
patent: 2006/0113614 (2006-06-01), Yoo et al.
patent: 2006/0131554 (2006-06-01), Joung et al.
patent: 2006/0151852 (2006-07-01), Senzaki
patent: 2006/0170027 (2006-08-01), Lee et al.
patent: 2006/0181317 (2006-08-01), Joo et al.
patent: 2006/0193175 (2006-08-01), Khang et al.
patent: 2009/0302296 (2009-12-01), Fuchigami et al.
U.S. Appl. No. 11/714,326, filed Mar. 5, 2007, Kumar et al.
U.S. Appl. No. 11/714,334, filed Mar. 5, 2007, Kumar et al.
U.S. Appl. No. 11/702,725, filed Feb, 5, 2007, Chiang et al.
U.S. Appl. No. 11/702,966, filed Feb. 5, 2007, Kumar et al.
U.S. Appl. No. 11/702,967, filed Feb. 5, 2007, Zhi-wen Sun et al.
Beck, A. et al. “Reproductive Switching Effect in Thin Films for Memory Applications” App. Phys. Lett. vol. 77, No. 1, Jul. 3, 2000, pp. 139-141.
Back, I.G. et al. “Multi-Layer Cross-Point Binary Oxide Resistive Memory (OxRRAM) for Post-NAND Storage Application” (c) 2005 IEEE.
Baek, I.G., et al. “Highly Scalable Non-volatile Reistive Memory Using Simple Binary Oxide Driven by Asymmetric Unipolar Voltage Pulses” (c) 2004 IEEE (IEDM). pp. 04-587 to 04-590.
Seo, S. et al. “Reproducable Resistance Switching in Polycrystalline NiO films” App. Phys. Lett. vol. 85, No. 23, Dec. 6, 2004, pp. 5655-5657.
Seo, S. et al. “Conductivity Switching Characteristics and Reset Currents in NiO films” App. Phys. Lett. vol. 86, 093509 (2005) pp. 093509-1 to 093509-3.
Seo, S. et al. “Electrode Dependence of Resistance Switching in Polycrystalline NiO films” App. Phys. Lett. vol. 87, 263507 (2005) pp. 263507-1 to 263507-3.
Kim, D.C., et al. “Electrical Observations of Filamentary Conductions for the Resistive Memory Switching in NiO films” App. Phys. Lett. vol. 88, 202102 (2006) pp. 202102-1 to 202102-3.
Kim, D.C. et al. “Improvement of Resistive Memory Switching in NiO using IrO2” App. Phys. Lett. vol. 88, 232106 (2006) pp. 232106-1 to 232106-3.
Kinoshita, K., et al. “Bias Polarity Dependent Data Retention of Resistive Random Access Memory Consisting of Binary Transistion Metal Oxide” App. Phys. Lett. vol. 89, 103509 (2006) pp. 103509-1 to 103509-3.
Mallory, G.O., “Chapter 1: The Fundamental Aspects of Electroless Nickel Plating” (pp. 1-56) In “Electroless Plating” Noyes Data Corporation/Noyes Publications (Jan. 1990).
Mallory, G.O., “Chapter 2: The Electroless Nickel Plating Bath: Effect of Variables on the Process” (pp. 57-99) in “Electroless Plating” Noyes Data Corporation/Noyes Publications (Jan. 1990).
Lauwers, A. et al. “CMOS Integration of Dual Work Function Phase Controlled Ni FUSI With Simultaneous Silicidation of NMOS (NiSi) and PMOS (Ni-rich silicide) Gates on HfSiON” (c) 2005 IEEE.
Yoshino, M. et al. “All-wet Fabrication Process of ULSI Interconnect Technologies” Electrochimica Acta 51 (2005) pp. 916-920.
Lee, S. et al. “Effect of Nonstoichiometry of Nickel Oxides on Their Supercapacitor Behavior” Electrochemical and Solid-State Letters 7 (10) (2004) pp. A299-A301.
Jayashree, R.S. et al. “Factors Governing the Electrochemical Synthesis of alpha-nickel (II) hydroxide” Journal of Applied Electrochemistry 29(1999) pp. 449-454.
Esposito, V. et al. “Electrical Properties of YSZ/NiO Composites Prepared by a Liquid Mixture Technique” Journal of European Ceramic Society 25 (2005) pp. 2637-2641.
Streinz, CC, et al. “The Effect of Current and Nickel Nitrate Concentration on the Deposition of Nickel Hydroxide Films” J. Electrochem. Soc., vol. 142, No. 4, Apr. 1995, pp. 1084-1089.
Murthy, M. et al. “A Model for the Galvanostatic Deposition of Nickel Hydroxide” J. Electrochem. Soc. vol. 143, No. 7, Jul. 1996, pp. 2319-2327.
Serebrennikova I., et al. “Electrochemical Behavior of Sol-Gel Produced Ni and Ni-Co Oxide Films” J. Electrochem. Soc., vol. 144, No. 2, Feb. 1997, pp. 566-572.
Kinoshita, K. et al., “Lowering the Switching Current of Resistance Random Access Memory Using a Hetero Junction Structure Consisting of Transistion Metal Oxides” Japanese Journal of Applied Physics, vol. 45, No. 37, 2006, pp. L991-L994.
Kuo, D., “Characterization of Nonstoichiometric TiO2 and ZrO2 Thin Films Stabilized by Al2O3 and SiO2 Additions” J. Vac. Sci. Technol. A 21(6). Nov./Dec. 2003, pp. 1996-2002.
Chan, I. et al. “Enhanced Hole Injections in Organic Light-Emitting Devices by Depositing Nickel Oxide on Indium Tin Oxide Anode” App. Phys. Lett. vol. 81, No. 10, Sep. 2002, pp. 1899-1901.
Park, J., “Influence of Oxygen Content on Electrical Properties of NiO Films Grown by RF Reactive Sputtering for Resistive Random-Access Memory Applications” J. Vac. Sci. Technol. B 24(5). Sep./Oct. 2006, pp. 2205-2208.
Park, J. et al. “Reproducible Resistive Switching in Nonstochiometric Nickel Oxide Films Grown by RF Reactive Sputtering for Resistive Random Access Memory Applications” J. Vac. Sci. Technol. A 23 (5), Sep./Oct. 2005 pp. 1309-1313.
Seo, S. et al. “Resistance Switching Mechanism of Metal/Oxide/Metal Structure (NiO)” Presentation of Samsung (undated).
Gibbons, J.F., et al. “Switching Properties of Thin NiO Films” Solid-State Electronics, Pergamon Press 1964, vol. 7, pp. 785-797.
Wohlfahrt, M. et al., “The Mechanism of Electrodeposition and Operation of Ni(OH)2 Layers” Solid State Ionics 86-88 (1996) pp. 841-847.
Hotovy, I., et al., “Deposition and Properties of Nickel Oxide Films Produced by DC Reactive Magnetron Sputtering” Vacuum, vol. 51, No. 2, pp. 157-160 (1998).
Xiang, W. et al. “Heteroepitaxial growth of Nb-doped SrTiO3 films on Si substrates by pulsed laser deposition for resistance memory applications” App. Phys. Lett. vol. 90, 052110 (2007) pp. 052110-1 to 052110-3.
Barstow Sean
Chiang Tony
Kumar Pragati
Malhotra Sandra G.
Geyer Scott B
Intermolecular, Inc
Nikmanesh Seahvosh J
LandOfFree
Methods for forming resistive-switching metal oxides for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods for forming resistive-switching metal oxides for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for forming resistive-switching metal oxides for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2658826