Semiconductor device manufacturing: process – Having metal oxide or copper sulfide compound semiconductor...
Reexamination Certificate
2011-07-05
2011-07-05
Menz, Laura M (Department: 2813)
Semiconductor device manufacturing: process
Having metal oxide or copper sulfide compound semiconductor...
C438S171000, C438S678000
Reexamination Certificate
active
07972897
ABSTRACT:
Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.
REFERENCES:
patent: 4960719 (1990-10-01), Tanaka et al.
patent: 5032531 (1991-07-01), Tsutsui et al.
patent: 5034339 (1991-07-01), Tanaka et al.
patent: 5045485 (1991-09-01), Tanaka et al.
patent: 5047819 (1991-09-01), Tanaka et al.
patent: 5278636 (1994-01-01), Williams et al.
patent: 5296716 (1994-03-01), Ovshinsky et al.
patent: 5335219 (1994-08-01), Ovshinsky et al.
patent: 5383088 (1995-01-01), Chapple-Sokol et al.
patent: 5536947 (1996-07-01), Klersy et al.
patent: 6034882 (2000-03-01), Johnson et al.
patent: 6180542 (2001-01-01), Hwang
patent: 6534784 (2003-03-01), Eliasson et al.
patent: 6815744 (2004-11-01), Beck et al.
patent: 6835949 (2004-12-01), Weiss et al.
patent: 6906939 (2005-06-01), Rinerson et al.
patent: 6944052 (2005-09-01), Subramanian et al.
patent: 6956757 (2005-10-01), Shepard
patent: 6965137 (2005-11-01), Kinney et al.
patent: 7038935 (2006-05-01), Rinerson et al.
patent: 7067862 (2006-06-01), Rinerson et al.
patent: 7420198 (2008-09-01), Baek et al.
patent: 7433200 (2008-10-01), Ishii et al.
patent: 7629539 (2009-12-01), Ishii et al.
patent: 7678607 (2010-03-01), Chiang et al.
patent: 7704789 (2010-04-01), Sun et al.
patent: 2002/0074584 (2002-06-01), Yang
patent: 2006/0050598 (2006-03-01), Rinerson et al.
patent: 2006/0054950 (2006-03-01), Baek et al.
patent: 2006/0073657 (2006-04-01), Herner et al.
patent: 2006/0076549 (2006-04-01), Ufert
patent: 2006/0097288 (2006-05-01), Baek et al.
patent: 2006/0098472 (2006-05-01), Ahn et al.
patent: 2006/0109704 (2006-05-01), Seo et al.
patent: 2006/0113614 (2006-06-01), Yoo et al.
patent: 2006/0131554 (2006-06-01), Joung et al.
patent: 2006/0151852 (2006-07-01), Senzaki
patent: 2006/0170027 (2006-08-01), Lee et al.
patent: 2006/0171200 (2006-08-01), Rinerson et al.
patent: 2006/0181317 (2006-08-01), Joo et al.
patent: 2006/0193175 (2006-08-01), Khang et al.
patent: 2006/0245243 (2006-11-01), Rinerson et al.
patent: 2006/0250837 (2006-11-01), Herner et al.
patent: 2006/0289942 (2006-12-01), Horii et al.
patent: 2007/0008773 (2007-01-01), Scheuerlein
patent: 2007/0008785 (2007-01-01), Scheuerlein
patent: 2007/0114508 (2007-05-01), Herner et al.
patent: 2007/0114509 (2007-05-01), Herner
patent: 2007/0164309 (2007-07-01), Kumar et al.
patent: 2007/0228354 (2007-10-01), Scheuerlein
patent: 2007/0236981 (2007-10-01), Herner
patent: 2007/0253176 (2007-11-01), Ishii et al.
patent: 2007/0285967 (2007-12-01), Toda et al.
patent: 2007/0295534 (2007-12-01), Ishii et al.
patent: 2008/0000673 (2008-01-01), Ishii et al.
patent: 2008/0007988 (2008-01-01), Ahn et al.
patent: 2008/0090337 (2008-04-01), Williams
patent: 2008/0105870 (2008-05-01), Yu et al.
patent: 2008/0142774 (2008-06-01), Walter
patent: 2008/0152792 (2008-06-01), Lian
patent: 2008/0185567 (2008-08-01), Kumar et al.
patent: 2008/0185572 (2008-08-01), Chiang et al.
patent: 2008/0185573 (2008-08-01), Sun et al.
patent: 2008/0219039 (2008-09-01), Kumar
patent: 2008/0220601 (2008-09-01), Kumar
patent: 2008/0248288 (2008-10-01), Boardman
patent: 2008/0278990 (2008-11-01), Kumar
patent: 2009/0183907 (2009-07-01), Ishii et al.
patent: 62134826 (1987-06-01), None
patent: 1020040104967 (2004-12-01), None
patent: 1020050052926 (2005-06-01), None
patent: 1020060032662 (2006-04-01), None
patent: 1020060042734 (2006-05-01), None
patent: 1020060055437 (2006-05-01), None
Jang et al. “Transparent Ohmic contacts of oxidized Ru and Ir on p-type GaN”, Journal of Applied Physics vol. 93, No. 9, 5416-5421, May 1, 2003.
Office Action, U.S. Appl. No. 11/702,725, Dec. 22, 2008.
Courtade et al., “Microstructure and resistance switching in NiO binary oxide films obtained from Ni oxidation,” Non-Volatile Memory Technology Symposium, Nov. 5-8, 2005, pp. 94-99.
Chen et al., “Non-Volatile Resistive Switching for Advanced Memory Applications,” Electron Devices Meeting, 2005, Dec. 5, 2006, pp. 746-749.
Office Action, U.S. Appl. No. 11/702,967, Dec. 10, 2008.
Beck, A. et al. “Reproducable Switching Effect In Thin Films for Memory Applications” App. Phys. Lett. vol. 77, No. 1, Jul. 3, 2000, pp. 139-141.
Baek, I.G. et al. “Multi-Layer Cross-Point Binary Oxide Reisitive Memory (OxRRAM) for Post-NAND Storage Application” (c) 2005 IEEE.
Baek, I.G., et al. “Highly Scalable Non-volatile Reistive Memory Using Simple Binary Oxide Driven By Asymmetric Unipolar Voltage Pulses” (c) 2004 IEEE (IEDM). pp. 04-587 to 04-590.
Seo, S. et al. “Reproducable Resistance Switching in Polycrystalline NiO films” App. Phys. Lett. vol. 85, No. 23, Dec. 6, 2004, pp. 5655-5657.
Seo, S. et al. “Conductivity Switching Characteristics and Reset Currents in NiO films” App. Phys. Lett. vol. 86, 093509 (2005) pp. 093509-1 to 093509-3.
Seo, S. et al. “Electrode Dependence of Resistance Switching in Polycrystalline NiO films” App. Phys. Lett. vol. 87, 263507 (2005) pp. 263507-1 to 263507-3.
Kim, D.C., et al. “Electrical Observations of Filamentary Conductions for the Resistive Memory Switching in Nio films” App. Phys. Lett. vol. 88, 202102 (2006) pp. 202102-1 to 202102-3.
Kim, D.C. et al. “Improvement of Resistive Memory Switching in NiO using IrO2” App. Phys. Lett. vol. 88, 232106 (2006) pp. 232106-1 to 232106-3.
Kinoshita, K., et al. “Bias Polarity Dependent Data Retention of Resistive Random Access Memory Consisting of Binary Transition Metal Oxide” App. Phys. Lett. vol. 89, 103509 (2006) pp. 103509-1 to 103509-3.
Mallory, G.O., “Chapter 1: The Fundamental Aspects of Electroless Nickel Plating” (pp. 1-56) In “Electroless Plating” Noyes Data Corporation/Noyes Publications (Jan. 1990).
Mallory, G.O., “Chapter 2: The Electroless Nickel Plating Bath: Effect of Variables on the Process” (pp. 57-99) In “Electroless Plating” Noyes Data Corporation/Noyes Publications (Jan. 1990).
Lauwers, A. et al. “CMOS Integration of Dual Work Function Phase Controlled Ni FUSI With Simultaneous Silicidation of NMOS (NiSi) and PMOS (Ni-rich silicide) Gates on HfSiON” (c) 2005 IEEE.
Yoshino, M. et al. “All-wet Fabrication Process of ULSI Interconnect Technologies” Electrochimica Acta 51 (2005) pp. 916-920.
Lee, S. et al. “Effect of Nonstoichiometry of Nickel Oxides on Their Supercapacitor Behavior” Electrochemical and Solid-State Letters 7 (10) (2004) pp. A299-A301.
Jayashree, R.S. et al. “Factors Governing the Electrochemical Synthesis of alpha-nickel (II) hydraxide” Journal of Applied Electrochemistry 29 (1999) pp. 449-454.
Esposito, V. et al. “Electrical Properties of YSZ/NiO Composites Prepared by A Liquid Mixture Technique” Journal of European Ceramic Society 25 (2005) pp. 2637-2641.
Streinz, CC., et al. “The Effect of Current and Nickel Nitrate Concentration on the Deposition of Nickel Hydroxide Films” J. Electrochem. Soc., vol. 142, No. 4, Apr. 1995. pp. 1084-1089.
Murthy, M. et al. “A Model for the Galvanostatic Deposition of Nickel Hydroxide” J. Electrochem. Soc. vol. 143, No. 7, Jul. 1996, pp. 2319-2327.
Serebrennikova I., et al. “Electrochemical Behavior of Sol-Gel Produced Ni and Ni-Co Oxide Films” J. El
Chiang Tony
Kumar Nitin
Lang Chi-I
Sun Zhi-Wen
Tong Jinhong
Intermolecular, Inc.
Menz Laura M
LandOfFree
Methods for forming resistive switching memory elements does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods for forming resistive switching memory elements, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for forming resistive switching memory elements will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2642956