Methods for forming planarized hermetic barrier layers and...

Details Methods for forming planarized hermetic barrier layers and... Methods for forming planarized hermetic barrier layers and...

2010-11-17

2011-10-18

Stark, Jarrett (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

Specified materials

C257S751000, C438S627000, C438S643000, C438S653000

Reexamination Certificate

active

08039920

ABSTRACT:
Methods and associated structures of forming a microelectronic structure are described. Those methods may comprise forming a conductive material in an interconnect opening within an interlayer dielectric material that is disposed on a substrate, forming a low density dielectric material on a surface of the dielectric layer and on a surface of the conductive material, and forming a high density dielectric barrier layer on the low density dielectric layer.

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